Miniaturized blue light laser device for semiconductor laser direct frequency doubling

A laser direct, semiconductor technology, applied in semiconductor lasers, lasers, devices for controlling laser output parameters, etc., can solve the problems of low cost performance, complex system, high price, etc., and achieve high optical conversion efficiency, small size, and low implementation cost. Effect

Active Publication Date: 2017-08-29
HARGLO APPLIED LASER TECH INST CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems existing in the existing all-solid-state blue light laser, such as: high price, low cost performance, complex system and other shortcomings, and to invent a near-infrared semiconductor laser with relatively mature technology. After beam shaping, it passes through PPLN A miniaturized all-solid-state laser for direct frequency doubling of crystals to generate blue laser light

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Miniaturized blue light laser device for semiconductor laser direct frequency doubling
  • Miniaturized blue light laser device for semiconductor laser direct frequency doubling
  • Miniaturized blue light laser device for semiconductor laser direct frequency doubling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Such as figure 1 As shown, a miniaturized blue laser with direct frequency doubling of a semiconductor laser includes a near-infrared semiconductor laser 1, a beam shaping and coupling lens group 2, a beam reflection device, a PPLN crystal, a heat sink 7 and a temperature controller 8. The beam The shaping and coupling lens group 2 is placed on the emitting end side of the near-infrared semiconductor laser 1. Both sides of the beam shaping and coupling lens group 2 are coated with a near-infrared laser antireflection coating. The laser beam is coupled by the beam shaping and coupling lens group 2. To the PPLN crystal in the optical oscillation cavity, both ends of the PPLN crystal 6 are equipped with optical oscillation cavities, and the PPLN crystal 6 is placed at the light waist position of the optical oscillation cavity, and the blue laser output is formed after oscillation in the optical oscillation cavity. The heat sink 7 is set There are three, respectively connecte...

Embodiment 2

[0063] Such as figure 2 As shown, a miniaturized blue laser with direct frequency doubling of a semiconductor laser includes a near-infrared semiconductor laser 1, a beam shaping and coupling lens group 2, a beam reflection device, a PPLN crystal, a heat sink 7 and a temperature controller 8. The beam The shaping and coupling lens group 2 is placed on the side of the emitting end of the near-infrared semiconductor laser 1. Both sides of the beam shaping and coupling lens group 2 are coated with a near-infrared laser high-transmitting film. The beam is shaped and the coupling lens group 2 and the beam After the reflection device is coupled to the PPLN crystal in the optical oscillation cavity, both ends of the PPLN crystal 6 are equipped with optical oscillation cavities, and the PPLN crystal 6 is placed at the light waist position of the optical oscillation cavity, and the blue laser output is formed after oscillation in the optical oscillation cavity. There are three heat sink...

Embodiment 3

[0073] Such as image 3 As shown, a miniaturized blue laser with direct frequency doubling of a semiconductor laser includes a near-infrared semiconductor laser 1, a beam shaping and coupling lens group 2, a beam reflection device, a PPLN crystal, a heat sink 7 and a temperature controller 8. The beam The shaping and coupling lens group 2 is placed on the side of the emitting end of the near-infrared semiconductor laser 1. Both sides of the beam shaping and coupling lens group 2 are coated with a near-infrared laser antireflection coating. The beam is coupled to the near-infrared laser through the beam shaping and coupling lens group 2. The PPLN crystal in the optical oscillation cavity, the two ends of the PPLN crystal 6 are equipped with optical oscillation cavities, the PPLN crystal 6 is placed in the optical waist position of the optical oscillation cavity, and the blue laser output is formed after oscillation in the optical oscillation cavity. The heat sink 7 is equipped wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a miniaturized blue light laser device for semiconductor laser direct frequency doubling. The miniaturized blue light laser device comprises a near-infrared semiconductor laser device, a laser beam shaping and coupling lens assembly, a PPLN crystal and a resonant endoscope, wherein the near-infrared semiconductor laser device comprises a near-infrared edge-emitting semiconductor laser device, a vertical cavity surface emitting semiconductor laser device and an optical fiber coupling output near-infrared semiconductor laser device; and the PPLN crystal is a quasi-phase-matched periodically poled crystal. The miniaturized blue light laser device is compact in structure, small in size, light in weight and low in cost; frequency doubling is realized by adopting the quasi-phase-matched periodically poled crystal PPLN, the device has relatively high light-light conversion efficiency, and blue laser with relatively high power can be obtained; and the near-infrared semiconductor laser device adopted in the invention is mature in technology, abundant in product types, high in practicability and convenient for popularization and application.

Description

Technical field [0001] The invention relates to a miniaturized all-solid-state laser, in particular to a blue all-solid-state laser that uses a semiconductor laser to directly double the frequency. Background technique [0002] Blue lasers have important applications in biophotonics instruments, biological analysis, spectroscopy, fluorescence excitation imaging, biological detection, laser medicine, and laser communications. At the same time, blue 488nm is also one of the two main laser output wavelengths of traditional Ar ion gas lasers that have been widely used. Compared with all solid-state lasers, gas lasers have the shortcomings of short life, low efficiency, complex structure and high operating cost. . Therefore, the research on the efficient and compact miniaturized blue all-solid-state laser generation technology is of great significance in scientific research, medical treatment, and display. [0003] At present, the main technical approaches for producing all-solid-stat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/06
CPCH01S5/0604
Inventor 樊仲维张鸿博赵水郭广妍许东晖
Owner HARGLO APPLIED LASER TECH INST CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap