Monocrystalline silicon growth method and monocrystalline silicon ingot prepared through monocrystalline silicon

Abstract

The present invention provides a monocrystalline silicon growth method, which comprises melting silicon raw materials placed in a crucible through a Czochralski method to form a melt, and pulling the melt to grow the monocrystalline silicon, wherein the silicon raw materials comprise a deuterium-doped silicon wafer with silicon nitride growing on the surface and crushed polysilicon blocks, gas comprising argon is introduced during melt forming, and a magnetic field is applied in the pulling step. The present invention further provides a method for preparing a wafer from the monocrystalline silicon.

Description

technical field [0001] The present invention relates to a method for growing silicon crystals, in particular to a method for growing single crystal silicon. Background technique [0002] During the growth of single crystal silicon by the Czochralski method (hereinafter sometimes referred to as the Czochralski method), due to the melting of the quartz crucible, some oxygen will enter the single crystal silicon, and these oxygen mainly exist in the silicon lattice. gap position. Precipitation occurs when the concentration of interstitial oxygen exceeds the solubility of oxygen in silicon, resulting in the formation of oxygen precipitation defects commonly found in single crystal silicon, which can cause damage to integrated circuit devices. [0003] Intrinsic gettering technology, that is, through the formation of high-density oxygen precipitation in the silicon wafer by a certain procedure, a defect-free clean area of ​​a certain depth can be formed on the surface of the sil...

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Problems solved by technology

When using a high-voltage device, the carriers in the channel have greater energy and can penetrate into the insulating layer, thereby deteriorating the performance of the device

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