Method for preparing nanocrystalline graphene on sapphire substrate
A sapphire substrate, graphene technology, applied in graphene, nano carbon and other directions, can solve problems such as limited size and price, increase process complexity, unfavorable graphene promotion and research, etc., and achieve the effect of reducing preparation cost
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Embodiment 1
[0022] (1) Put the sapphire substrate into the graphene PECVD plasma equipment, and evacuate to 10 -2 mbar, filled with argon gas for 2 minutes, vacuumized and filled with inert gas again, and repeated the above steps twice to ensure that the chamber environment is a low-oxygen environment, and then filled with hydrogen gas to 2mabr; PECVD (Plasma Enhanced Chemical Vapor Deposition)--plasma volume-enhanced chemical vapor deposition;
[0023] (2) Heating the sapphire substrate to 850 ºC;
[0024] (3) The substrate was pretreated for 5 minutes under a hydrogen atmosphere;
[0025] (4) Set the power of the PECVD plasma source to 50W, set the chamber pressure to 2 mabr, set the hydrogen flow rate to 100 sccm, turn on the PECVD plasma power supply, and form plasma;
[0026] (5) Introduce methane, the methane flow rate is 6 sccm, and grow for 5 minutes;
[0027] (6) Turn off the carbon source, turn off the plasma, the growth is over, and cool down to room temperature.
Embodiment 2
[0029] (1) Put the sapphire substrate into the graphene PECVD plasma equipment, and evacuate to 10 -2 mbar, filled with argon gas for 2 minutes, vacuumized again and filled with inert gas, repeated the above steps twice, and finally filled with hydrogen gas to 10 mabr;
[0030] (2) Heating the sapphire substrate to 900 ºC;
[0031] (3) The substrate was pretreated for 10 min under a hydrogen atmosphere;
[0032] (4) Set the power of the PECVD plasma source to 90W, set the chamber pressure to 10 mabr, set the hydrogen flow rate to 300 sccm, turn on the PECVD plasma power supply, and form plasma;
[0033] (5) Add methane, the methane flow rate is 50 sccm, and grow for 10 min;
[0034] (6) Turn off the carbon source, turn off the plasma, the growth is over, and cool down to room temperature.
Embodiment 3
[0036] (1) Put the sapphire substrate into the graphene PECVD equipment, and evacuate to 10 -2 mbar, filled with argon gas for 2 minutes, vacuumed again and flushed with inert gas, repeated the above steps twice, and finally filled with hydrogen gas to 15 mabr;
[0037] (2) Heating the sapphire substrate to 950 ºC;
[0038] (3) The substrate was pretreated for 20 min under a hydrogen atmosphere;
[0039] (4) Set the PECVD plasma source power to 120W, set the chamber pressure to 15 mabr, set the hydrogen flow rate to 500 sccm, turn on the plasma power supply, and form plasma;
[0040] (5) Add methane, the methane flow rate is 100 sccm, and grow for 15 minutes;
[0041] (6) Turn off the carbon source, turn off the plasma, the growth is over, and cool down to room temperature.
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