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QLED (quantum dot light emitting diode) device and manufacturing method thereof

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as the inability to effectively increase the number of injections of QLED devices, transmission efficiency, and low ionization potential, so as to reduce difficulty, The effect of increasing the number of injections and improving the transmission efficiency

Inactive Publication Date: 2017-09-26
BOE TECH GRP CO LTD
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  • Description
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Problems solved by technology

However, the ionization potential of PEDOT:PSS is still relatively low, which cannot effectively improve the number of holes injected and the efficiency of transmission in QLED devices.

Method used

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  • QLED (quantum dot light emitting diode) device and manufacturing method thereof
  • QLED (quantum dot light emitting diode) device and manufacturing method thereof

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Embodiment Construction

[0022] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0023] like figure 1 As shown, the embodiment of the present invention provides a QLED device, which includes: a substrate 1, and an ITO electrode layer 2, a P-doped dielectric layer 3, a hole transport layer 4, and quantum dots stacked on the substrate 1 in sequence. Light emitting layer 5, electron transport layer 6 and top electrode layer 7.

[0024] During specific implementation, in the hole injection process of the above-mentioned QLED devic...

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Abstract

The invention discloses a QLED (quantum dot light emitting diode) device and a manufacturing method thereof, relates to the technical field of display and solves the technical problem of poorer performance of the QLED device due to poorer hole injection and transmission performance of existing QLED devices. The QLED device comprises a substrate as well as an ITO electrode layer, a P-doped dielectric layer, a hole transmission layer, a quantum dot light emitting layer, an electronic transmission layer and a top electrode layer which are stacked on the substrate sequentially. The provided QLED device is applied to a QLED.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a QLED device and a manufacturing method thereof. Background technique [0002] In recent years, quantum dot light-emitting diodes (QLEDs) have received extensive attention and research in the fields of lighting and display due to their many advantages such as high brightness, low power consumption, wide color gamut, and easy processing. [0003] In the traditional front-mounted QLED device, since the work function of indium tin oxide (ITO) in the anode is low, and the ionization potential of the quantum dot material in the quantum dot light-emitting layer is relatively high, it is necessary to emit light between the anode and the quantum dots. A hole injection layer is inserted between the layers to increase the number of holes injected into the QLED device and the efficiency of transmission, thereby improving the performance of the QLED device. [0004] At present, the common...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/155H10K71/00H10K71/135
Inventor 宋莹莹
Owner BOE TECH GRP CO LTD
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