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Single-photon CMOS image sensor pixel circuit with small pixel size

An image sensor and pixel circuit technology, applied in circuits, image communication, television, etc., can solve the problems of long integration time, signal-to-noise ratio requirements of processing circuits, slow processing process, etc., and achieve the effect of simplified structure

Active Publication Date: 2017-09-29
SHENZHEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, on the one hand, it is difficult for the traditional photodiode CMOS image sensor to achieve the sensitivity of single photon detection, and it has extremely high requirements on the signal-to-noise ratio of the processing circuit required at the back end.
On the other hand, the traditional photodiode CMOS image sensor has a relatively long integration time for photocurrent, which is a relatively slow processing process.

Method used

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  • Single-photon CMOS image sensor pixel circuit with small pixel size
  • Single-photon CMOS image sensor pixel circuit with small pixel size
  • Single-photon CMOS image sensor pixel circuit with small pixel size

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Embodiment Construction

[0025] In order to make the technical means realized by the present invention clear, the present invention is further described below.

[0026] combined with Figure 4 And attached Figure 5 As shown, the single-photon CMOS image sensor pixel circuit with low pixel size includes a quenching circuit, an analog counting circuit and a readout circuit. One end of the quenching circuit is connected to the analog counting circuit, and one end of the analog counting circuit is connected to the readout circuit. an avalanche diode and a quenching transistor, the quenching circuit controls the operation and closing of the single photon avalanche diode and generates pulses. In the quenching circuit, the single photon avalanche diode works in the Geiger region, that is, the voltage across the single photon avalanche diode is higher than the breakdown voltage of the single photon avalanche diode itself, so a very high voltage is formed inside the single photon avalanche diode. Electric f...

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Abstract

The invention provides a single-photon CMOS image sensor pixel circuit with a small pixel size. The circuit comprises a quenching circuit, an analog counting circuit, and a reading circuit, wherein one end of the quenching circuit is connected with the analog counting circuit; one end of the analog counting circuit is connected with the reading circuit; and the quenching circuit comprises a single-photon avalanche diode, and controls the single-photon avalanche diode to work, close and produce pulses. The single-photon CMOS image sensor pixel circuit provided by the invention has the advantages that only five NMOS transistors and the single-photon avalanche diode are adopted, so that the structure is simplified; and the circuit is applicable for a high-resolution single-photon CMOS image sensor.

Description

[technical field] [0001] The invention relates to a CMOS image sensor pixel circuit and a system framework of an integrated circuit, which is suitable for a single-photon CMOS image sensor with low pixel size and high resolution. [Background technique] [0002] In recent years, the properties of fluorescence have been increasingly used for research in life sciences. In addition to applications such as environmental detection, clinical medicine, and DNA sequencing, fluorescence can also be used for cell identification and flow cytometry classification to reveal the location and movement of substances inside cells. Steady-state fluorescence microscopy is often used in cell analysis, however, it is sensitive to certain light-intensity-based factors such as changes in the intensity of the excitation light source, photobleaching, and so on. And this technique makes it difficult to distinguish between fluorophores with the same excitation and emission spectra. Fluorescence lifet...

Claims

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Application Information

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IPC IPC(8): H04N5/374H04N5/3745H01L27/146
CPCH01L27/14601H01L27/14643H04N25/76H04N25/77
Inventor 赵晓锦罗文基卢欣王丽娟
Owner SHENZHEN UNIV