Electron beam evaporation technology based preparation method for ZnO high-transmittance and high-conductivity film

Abstract

The invention discloses an electron beam evaporation technology based preparation method for a ZnO high-transmittance and high-conductivity film. The method comprises the following steps that zinc oxide particles are put in a mold to be pressurized, after the zinc oxide particles are pressed into a compact block, the compact block is taken out and put in a corundum box, the corundum box is put in a sintering furnace after 24 h, and a target is obtained through sinter molding at a certain temperature; and a machine is started to put the target in a copper crucible, quartz glass obtained after cleaning and drying is clamped into a slide glass disc, a bell jar of an electron beam evaporation table is vacuumized, the bell jar is filled with hydrogen or nitrogen to be cleaned, a quartz glass piece is heated, the target is bombarded through electron beams, and the evaporation rate is controlled. The film obtained through the method has high stability, light transmittance and conductivity, the price of adopted raw materials is extremely low, and the basic requirements for the high light transmittance, the high conductivity and the low price of the transparent conductive film are met.

Description

technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a ZnO thin film with high transmittance and high conductivity based on electron beam evaporation technology. Background technique [0002] Zinc oxide (ZnO) transparent conductive thin films have been widely used in the fields of optoelectronic devices, acousto-optic devices, acousto-optic modulators, and military applications. The existing preparation methods mainly include chemical methods, chemical-physical methods and physical methods. Method: The transmittance of the film prepared by the chemical method is low, while the conductivity of the film prepared by the magnetron sputtering method is not high, and the process of the zinc oxide film prepared by the reactive evaporation method is very uncontrollable and unstable. Contents of the invention [0003] In order to solve the above problems, the present invention provides a method for preparing a Zn...

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Problems solved by technology

[0002] Zinc oxide (ZnO) transparent conductive thin films have been widely used in the fields of optoelectronic devices, acousto-optic devices, acousto-optic modulators, and military applications. The existing preparation methods mainly include chemical methods, chemical-physical methods and physical methods. Method; the film transmittance prepared by the chemical method is low, and the conductivity of the film prepared by the magnetron sputtering method is not high, and the process of the zinc oxide film prepared by the reaction evaporation method is very difficult to control and unstable

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