Electron beam evaporation technology based preparation method for ZnO high-transmittance and high-conductivity film

An electron beam evaporation, high transmittance technology, applied in vacuum evaporation coating, ion implantation coating, metal material coating process, etc. Low rate and other problems, to achieve the effect of low price, high stability, broad-spectrum transparency

Inactive Publication Date: 2017-10-20
张治国
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  • Abstract
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Problems solved by technology

[0002] Zinc oxide (ZnO) transparent conductive thin films have been widely used in the fields of optoelectronic devices, acousto-optic devices, acousto-optic modulators, and military applications. The existing preparation methods mainly include chemical methods, chemical-physical methods and physi

Method used

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  • Electron beam evaporation technology based preparation method for ZnO high-transmittance and high-conductivity film
  • Electron beam evaporation technology based preparation method for ZnO high-transmittance and high-conductivity film

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Embodiment

[0022] An embodiment of the present invention provides a method for preparing a ZnO thin film with high transmittance and high conductivity based on electron beam evaporation technology, including the following steps:

[0023] S1. Glass cleaning process

[0024] Place a certain size of glass on the bracket of the cleaning tank, use washing powder + detergent to scrub both sides of the glass with a sponge, after cleaning, rinse with tap water, then rinse with deionized water and dry naturally; place the glass on stainless steel Ultrasonic cleaning with acetone for 5 minutes on the hanger, and then ultrasonic cleaning with absolute ethanol for 5 minutes; ultrasonic cleaning with deionized water twice, 5 minutes each time. Put the washed glass into the oven to dry for later use.

[0025] S2, ZnO target preparation process

[0026] Fill a mold with a diameter of 2.5 cm and a depth of 4 cm with ZnO powder, and vibrate slightly. Fill it up and pour it into a clean container, add ...

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Abstract

The invention discloses an electron beam evaporation technology based preparation method for a ZnO high-transmittance and high-conductivity film. The method comprises the following steps that zinc oxide particles are put in a mold to be pressurized, after the zinc oxide particles are pressed into a compact block, the compact block is taken out and put in a corundum box, the corundum box is put in a sintering furnace after 24 h, and a target is obtained through sinter molding at a certain temperature; and a machine is started to put the target in a copper crucible, quartz glass obtained after cleaning and drying is clamped into a slide glass disc, a bell jar of an electron beam evaporation table is vacuumized, the bell jar is filled with hydrogen or nitrogen to be cleaned, a quartz glass piece is heated, the target is bombarded through electron beams, and the evaporation rate is controlled. The film obtained through the method has high stability, light transmittance and conductivity, the price of adopted raw materials is extremely low, and the basic requirements for the high light transmittance, the high conductivity and the low price of the transparent conductive film are met.

Description

technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a ZnO thin film with high transmittance and high conductivity based on electron beam evaporation technology. Background technique [0002] Zinc oxide (ZnO) transparent conductive thin films have been widely used in the fields of optoelectronic devices, acousto-optic devices, acousto-optic modulators, and military applications. The existing preparation methods mainly include chemical methods, chemical-physical methods and physical methods. Method: The transmittance of the film prepared by the chemical method is low, while the conductivity of the film prepared by the magnetron sputtering method is not high, and the process of the zinc oxide film prepared by the reactive evaporation method is very uncontrollable and unstable. Contents of the invention [0003] In order to solve the above problems, the present invention provides a method for preparing a Zn...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/08
CPCC23C14/086C23C14/30
Inventor 张治国
Owner 张治国
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