Ferroelectric gate dielectric CdSe nanowire photoelectric transistor and preparation method thereof

Abstract

The invention belongs to the micro-nano photoelectric detector field, to be specific, relates to a PZT ferroelectric gate dielectric CdSe nanowire photoelectric transistor and the preparation method thereof. A device comprises a back gate structure, mainly comprises a source electrode, a drain electrode, a channel, a gate, a gate dielectric, and a substrate. The channel material is an In-doped CdSe nanowire, the gate is metal or SrRuO3, the gate dielectric is a PZT ferroelectric thin film, and the substrate is a SiO2 / Si or SrTiO3 substrate. By comparing with the conventional CdSe nanowire photoelectric transistors, the ferroelectric gate dielectric CdSe nanowire photoelectric transistor is advantageous in that 1) the dielectric constant of the PZT ferroelectric thin film is higher than that of SiO2, HfO2, Al203, and other conventional gate dielectrics, and then the channel carrier regulation control capability of the gate is improved; 2) residual polarization field intensity is adopted by the PZT ferroelectric thin film to regulate and control the channel carrier, and then the power consumption of the device is reduced; 3) compared with the PZT ferroelectric thin film, an organic ferroelectric material P(VDF-TrFE) has advantages of high residual polarization, low coercive field intensity, stable property, and compatibility with microelectronic technology.

Description

technical field [0001] The invention belongs to the field of micro-nano photodetectors, in particular to a lead zirconate titanate (PZT, PbZr x Ti (1-x) o 3 , 0<x<1) a CdSe nanowire phototransistor with a ferroelectric film gate dielectric and a preparation method thereof. Background technique [0002] Photodetectors are a class of devices that convert optical signals into electrical signals, and are widely used in sensing, imaging, display, and optical communication. Photodetectors can be roughly divided into three categories according to their working principles: photoconductive type, photodiode type, and phototransistor type. Among them, the phototransistor is a kind of three-terminal device, and the general structure includes metal-oxide-semiconductor field effect transistor type, junction field effect transistor type and metal-semiconductor field effect transistor type. Among them, the metal-oxide-semiconductor field effect transistor phototransistor is a rela...

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Problems solved by technology

compared to SiO 2 , HfO 2 and Al 2 o 3 Equal gate dielectric, P(VDF-TrFE) ferroelectric gate dielectric can use its residual polarization electric field to deplete channel carriers and reduce the dark current and power consumption of phototransistors, but P(VDF-TrFE) has the following disadvantages : slow ferroelectric domain inversion rate, high coercive field strength, poor mechanical and thermal stability, and not compatible with microelectronic processes

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