A deep trench dmos device

A deep groove and device technology, applied in the field of deep groove DMOS devices, can solve the problems of increased junction surface, high production cost, poor body diode reverse recovery characteristics, etc., and achieve the goal of reducing on-resistance and improving reverse withstand voltage performance Effect
CN107316905BActive Publication Date: 2020-09-29HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
Publication Date
2020-09-29

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Abstract

The invention provides a deep groove DMOS device and belongs to the technical field of power semiconductor devices. The present invention includes a metallized source electrode, a drift region, a substrate, and a metallized drain electrode arranged from top to bottom; wherein the drift region has deep grooves and body regions located on both sides or the periphery thereof, and the deep grooves include gate electrodes, The gate dielectric layer and the strained insulating dielectric region, the lower surface of the strained insulating dielectric region is in contact with the upper surface of the substrate. In the present invention, by introducing a strained insulating dielectric region with compressive or tensile properties into the deep groove structure, stress is applied to the semiconductor material where the multi-subcurrent flow path is located, thereby increasing the mobility of carriers and reducing the on-resistance; At the same time, the strained insulating dielectric region is doped with charges to form a lateral electric field with the drift region, assisting in depleting the drift region, and achieving the purpose of improving the reverse withstand voltage of the device.
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Description

technical field

[0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a deep groove DMOS device. Background technique

[0002] Two key parameters of power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) are breakdown voltage BV and on-resistance R on . Since MOSFET devices are single-stage devices, their breakdown voltage is related to the thickness of the drift region and the doping concentration of the drift region. A high breakdown voltage requires a thick drift region and a low doping concentration of the drift region, but this will make its conduction On-resistance R on Increase. On-resistance R on There is a relationship between the withstand voltage and BV: Ron∝BV 2.5 , the silicon limit. Therefore, as the withstand voltage of the device increases, the on-resistance increases exponentially, and the power consumption increases greatly. In particular, the on-resistance in typical high-voltage MOSFET d...

Claims

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