Unlock instant, AI-driven research and patent intelligence for your innovation.

Nitride semiconductor element and production method thereof

A technology of nitride semiconductors and manufacturing methods, which is applied in semiconductor devices, electrical components, circuits, etc., and can solve problems affecting crystal quality, luminous efficiency of LED devices, lattice mismatch, etc.

Active Publication Date: 2017-11-03
XIAMEN SANAN OPTOELECTRONICS CO LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, due to the lattice mismatch between the n-type nitride semiconductor layer and the AlN buffer layer, a huge compressive stress is generated on the AlGaN grown later, and more dislocation density is derived, which in turn affects the crystal quality and the luminous efficiency of LED devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride semiconductor element and production method thereof
  • Nitride semiconductor element and production method thereof
  • Nitride semiconductor element and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] This embodiment adopts metal organic compound chemical vapor deposition (MOCVD) epitaxial growth technology, and uses sapphire as the growth substrate for epitaxial growth, using trimethylgallium (TMGa), triethylgallium (TEGa), and trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia (NH3) silane (SiH4) and dimagnesocene (Cp2Mg) respectively provide gallium source, indium source, aluminum source, and nitrogen source, silicon source, source of magnesium. Such as figure 2 As shown, the growth process of the ultraviolet LED epitaxial structure is as follows.

[0030] (1) After the sapphire is used as the growth substrate 210 for special cleaning treatment, put it into the MOCVD equipment and bake at 1100° C. for 10 minutes.

[0031] (2) Control the growth temperature to 1000~1300°C, grow the stress modulation layer 260, the thickness of which is between 100~1000nm, and the material is Al X Ga 1-X N, controlled by the flow rate of Al and Ga, makes its lattice c...

Embodiment 2

[0039]In this embodiment, metal organic compound chemical vapor deposition (MOCVD) epitaxial growth technology is adopted, and sapphire is used as a growth substrate for epitaxial growth. Trimethylgallium (TMGa), triethylgallium (TEGa), trimethylaluminum ( TMAl), ammonia (NH3) and silane (SiH4) to provide the gallium source, aluminum source, nitrogen source, and silicon source required for growth, respectively, to grow to the n-type AlGaN layer 300, and compare the presence or absence of the stress modulation layer 260 effect on surface morphology.

[0040] (1) After the sapphire is used as the growth substrate 210 for special cleaning treatment, put it into the MOCVD equipment and bake at 1100° C. for 10 minutes.

[0041] (2) Control the growth temperature to 1000-1300°C, grow the stress-modulating layer 260, the thickness of which is between 1000-5000nm, preferably 2000-3000nm, and the material is Al X Ga 1-X N, wherein the Al component X can be 0.2~0.9, and the preferred ...

Embodiment 3

[0046] This embodiment adopts metal organic compound chemical vapor deposition (MOCVD) epitaxial growth technology, uses sapphire as the growth substrate for epitaxial growth, and uses trimethylgallium (TMGa), triethylgallium (TEGa), and trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia (NH3) silane (SiH4) and dimagnesocene (Cp2Mg) respectively provide gallium source, indium source, aluminum source, and nitrogen source, silicon source, source of magnesium. Such as figure 2 As shown, the growth process of the ultraviolet LED epitaxial structure is as follows.

[0047] (1) After the sapphire is used as the growth substrate 210 for special cleaning treatment, put it into the MOCVD equipment and bake at 1100° C. for 10 minutes.

[0048] (2) Gradient growth temperature is 1000~1300°C, growth stress modulation layer 260, the thickness is between 1000~3000nm, the material is Al X Ga 1-X N, so that its average lattice constant is greater than the lattice constant of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nitride semiconductor element and a production method thereof. The element comprises a substrate, a stress regulation layer positioned on the substrate, an AlN buffer layer positioned on the stress regulation layer, and an n-type semiconductor layer, an active layer and a p-type semiconductor layer positioned on the buffer layer in sequence, wherein the lattice constant of the stress regulation layer is more than that of the AlN buffer layer, but not more than that of the n-type semiconductor layer. The stress regulation layer is inserted between the substrate and the AlN buffer layer, so that pressure stress of the n-type nitride semiconductor layer can be reduced, and thus material crystalline quality is improved, and light emitting efficiency is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a nitride semiconductor element and a manufacturing method thereof. Background technique [0002] In recent years, UV LEDs have gradually replaced lower-power mercury lamps with the improvement of product power and technological advancement, plus the advantages of long life and small size. At the same time, the Minamata Convention on the international ban on mercury will come into effect in 2020, and this policy will accelerate the arrival of large-scale applications of UV LEDs. [0003] At present, the buffer layer of deep ultraviolet LED is mainly composed of AlN. figure 1 For the traditional deep ultraviolet LED epitaxial structure, an AlN buffer layer is formed on the substrate, and an n-type nitride semiconductor layer, a quantum well light-emitting layer and a p-type nitride semiconductor layer are formed on the AlN buffer layer. Among them, due to the lattice mis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/007H01L33/12H01L33/32H01L33/04
Inventor 卓昌正陈圣昌邓和清
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD