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TaN thin-film resistor for high-temperature environment and preparation method of TaN thin-film resistor

A high-temperature environment and thin-film resistor technology, which is applied in thin-film resistors, resistor manufacturing, resistors, etc., can solve the problems of decreased adhesion of electrode layers, large TCR changes, and large resistance values, and achieves a small temperature coefficient. , good precision, avoid peeling effect

Active Publication Date: 2017-11-07
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Improve the TCR and thermal stability of TaN resistors from the above three aspects, and achieved good results, but most of these resistors can only have good performance when used below 120 ° C. When the temperature is higher, the TCR changes greatly. At the same time, the adhesion of the electrode layer decreases or even peels off, and the resistance value of the resistor becomes significantly larger, so it cannot be used at a higher temperature

Method used

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  • TaN thin-film resistor for high-temperature environment and preparation method of TaN thin-film resistor

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preparation example Construction

[0049] A method for preparing a TaN thin film resistor used in a high temperature environment, comprising the following steps:

[0050] A) According to the size parameters of the resistance film pattern and electrode pattern to be designed, a photolithographic mask plate corresponding to the resistance pattern and electrode pattern is produced. The area of ​​the resistive film on the resistive pattern mask is designed as a non-transparent area, the grooves, holes and other areas are designed as a light-transmitting area, the electrode area on the electrode pattern mask is designed as a non-transparent area, and the area other than the electrodes is designed as a non-transparent area. The light-transmitting area, so when the resistive pattern mask is used in the exposure process, a non-photosensitive area consistent with the resistive film pattern can be formed on the photoresist, and the photoresist can be formed on the photoresist when the electrode pattern mask is used. Non-...

Embodiment 1

[0057] Example 1: Making a grooved thin film resistor, the size of the resistor is 1.8×0.5×0.25mm 3 , the electrode plane size is 0.5×0.5mm 2 , the effective area of ​​the resistive film is 0.8×0.5mm 2 , including the following steps:

[0058] Step 1: Take a clean, 0.25mm-thick, 3-inch square single-side polished AlN substrate as the substrate 1;

[0059] Step 2, using radio frequency magnetron sputtering technology to deposit a layer of TaN resistance film on the polished surface of the dielectric substrate 1 as the resistance film 2; deposition parameters: the sputtering power is 200W, the nitrogen partial pressure is 3%, and the sputtering pressure is 0.1 Pa, the deposition time is 10min, and the thickness is about 180nm.

[0060] Step 3: Coat a layer of photoresist on the surface of the resistive film 2, spread the glue on the coater at a speed of 2000 rpm for 10 minutes, then use a resistive film mask to expose for 10 seconds under the exposure machine, and develop for...

Embodiment 2

[0069] Example 2: Making a thin film resistor with a cylindrical hole, the size of the resistor is 2.0×0.6×0.25mm 3 , the electrode plane size is 0.6×0.6mm 2 , the effective area of ​​the resistive film is 0.8×0.6mm 2 , including the following steps:

[0070] Step 1: Take a clean 3-inch single-side polished AlN substrate with a thickness of 0.25 mm as the substrate 1;

[0071] Step 2, using radio frequency magnetron sputtering technology to deposit a layer of TaN resistance film on the polished surface of the dielectric substrate 1 as the resistance film 2; deposition parameters: the sputtering power is 200W, the nitrogen partial pressure is 3%, and the sputtering pressure is 0.1 Pa, the deposition time is 10min, and the thickness is about 180nm.

[0072] Step 3: Coat a layer of photoresist on the surface of the resistive film 2, spread the glue on the coater at a speed of 2000 rpm for 10 minutes, then use a resistive film mask to expose for 10 seconds under the exposure ma...

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Abstract

The invention discloses a TaN thin-film resistor for the high-temperature environment and a preparation method of the TaN thin-film resistor. The TaN thin-film resistor comprises a substrate, a resistive film, two transition metal layers and two electrodes from bottom to top sequentially, wherein the two transition metal layers are arranged on two sides of the resistive film respectively; the two electrodes are attached to the upper surfaces of the two transition metal layers respectively; the resistive film is attached to the upper surface of the substrate, is a TaN resistive film and is 100-200 nm thick; channels or holes are formed in the position, where the resistive film is connected with the transition metal layers, of the resistive film. The metal layers and the resistive layer are in embedded three-dimensional contact, the metal layers and the resistive layer in the embedded position extrude each other to be tightly contacted because of thermal expansion of the resistive layer and the metal layers when used at the high temperature, and failure caused by stripping of the metal layers is avoided, so that the resistor has better thermal stability and reliability.

Description

technical field [0001] The invention relates to the technical field of thin film resistors, in particular to a method for preparing TaN thin film resistors used in high temperature environments. Background technique [0002] Such as figure 1 As shown, thin film resistors currently on the market are generally formed by sequentially depositing a resistive film 2 , a transition metal layer 3 and a surface metal electrode 4 on a dielectric substrate 1 . Dielectric substrate 1 generally adopts 96 alumina ceramic substrate, 99 alumina ceramic substrate, AlN ceramic substrate and BeO ceramic substrate; according to the required resistance range and application environment, resistive film 2 mainly includes carbon film, metal film and metal oxide When the adhesion between the electrode 4 and the resistance film 2 is small, a transition metal layer 3 will be added between the electrode 4 and the resistance film 2 to enhance the adhesion of the electrode 4. The commonly used transitio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/00H01C17/12H01C17/00
CPCH01C7/006H01C17/003H01C17/12
Inventor 刘平安叶升黄晨宇曾令可
Owner SOUTH CHINA UNIV OF TECH
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