74results about "Resistor manufacture by lithography" patented technology

The present invention provides a method for making a heating element adhered to a substrate by applying a photocurable composition to a flexible substrate in a pattern having one or more grid lines. The photocurable composition is curable into an electrically conductive layer and volatile organic compounds are present in an amount of less than about 10% of the total weight of the photocurable composition. After the pattern is deposited on the substrate it is cured by illuminating the photocurable composition with light for a sufficient period of time to cure the photocurable composition. In another embodiment of the invention heating elements made by the method of the invention are provided.

A heating plate 10 includes: a pair of glass plates 11, 12; a conductive pattern 40, 70 disposed between the pair of glass plates 11, 12 and defining a plurality of opening areas 43, 73; and a joint layer 13, 14 disposed between the conductive pattern 40, 70 and at least one of the pair of glass plates 11, 12; wherein the conductive pattern 40, 70 includes a plurality of connection elements 44, 74 that extend between two branch points 42, 72 to define the opening areas 43, 73; and a rate of the connection elements 44, 74, which are straight line segments connecting the two branch points 42, 72, relative to the plurality of connection elements 44, 74, is less than 20%.

The present invention provides a method for making a heating element adhered to a substrate by applying a photocurable composition to a flexible substrate in a pattern having one or more grid lines. The photocurable composition is curable into an electrically conductive layer and volatile organic compounds are present in an amount of less than about 10% of the total weight of the photocurable composition. After the pattern is deposited on the substrate it is cured by illuminating the photocurable composition with light for a sufficient period of time to cure the photocurable composition. In another embodiment of the invention heating elements made by the method of the invention are provided.

The present invention is directed to a thick film patterned resistor on a substrate and to a method of forming it. The method involves providing a substrate with opposed surfaces, where one surface is coated with a layer of a resistor composition. A photoresist is applied over the layer of the resistor composition, and a desired pattern in the photoresist is formed, where the pattern leaves certain regions of the resistor composition layer uncovered by the photoresist. The resistor composition layer which is uncovered by the photoresist is etched under conditions effective to leave a mass of loosely bound resistor particles at regions of the resistor composition which are not covered by photoresist. The mass of resistor particles is then removed from the substrate to produce a thick film patterned resistor on the substrate.

A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulation film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire. Using a pattern-forming process by etching of the insulation film for forming the metal thin film pattern, the deterioration of the device or the lowering of the durability can be overcome, the resistance of the metal thin film resistor can be easily controlled, and the resolving power can be improved by producing the high-resistance metal thin film temperature having reduced line with of the metal thin film pattern.

In the manufacture of low-impedance electrical resistors made of a metal sheet or a film consisting of a metallic resistance alloy, a metal forming the connection contacts of the resistors is electroplated onto a multitude of photolithographically defined parallel strips, which extend, at regular mutual intervals, over the entire metal sheet or film surface. To separate the resistors, the electroplated metal piece is sawed longitudinally into cutting planes, which extend perpendicularly with respect to each other, and with respect to the metal sheet, where, in each case, the cutting planes of one group divide one of the connection contact strips in its longitudinal direction.

A metal strip resistor is provided. The metal strip resistor includes a metal strip forming a resistive element and providing support for the metal strip resistor without use of a separate substrate. There are first and second opposite terminations overlaying the metal strip. There is plating on each of the first and second opposite terminations. There is also an insulating material overlaying the metal strip between the first and second opposite terminations. A method for forming a metal strip resistor wherein a metal strip provides support for the metal strip resistor without use of a separate substrate is provided. The method includes coating an insulative material to the metal strip, applying a lithographic process to form a conductive pattern overlaying the resistive material wherein the conductive pattern includes first and second opposite terminations, electroplating the conductive pattern, and adjusting resistance of the metal strip.

The invention discloses a metal foil chip type current detection resistor and a manufacturing process thereof. Front electrodes are symmetrically printed on two sides, extending along the x-axis direction, of the front surface of the insulating substrate, and back electrodes are symmetrically printed on two sides, extending along the x-axis direction, of the back surface of the insulating substrate, the back electrodes and the front electrodes are in one-to-one correspondence and are symmetrically arranged, so that the electrodes at the two ends of the insulating substrate are full, the resistance integrity is guaranteed, and the power of the chip fixed resistor is improved. The R part of the resistor is made of the alloy foil, so that the resistance value can be ensured, and the stability of the resistance value can be ensured, and an excellent resistor temperature coefficient index can be achieved; in addition, the R part of the resistor is arranged on the back surface of the insulating substrate, the heat dissipation path and the heat dissipation condition can be greatly improved, and the resistor can quickly dissipate the heat of the resistor to the PCB. It is guaranteed that the power of the chip fixed resistor is further improved. The metal foil type current detection resistor can be widely applied to manufacturing of a power supply.

A heating plate 10 includes: a pair of glass plates 11, 12; a conductive pattern 40, 70 disposed between the pair of glass plates 11, 12 and defining a plurality of opening areas 43, 73; and a joint layer 13, 14 disposed between the conductive pattern 40, 70 and at least one of the pair of glass plates 11, 12; wherein the conductive pattern 40, 70 includes a plurality of connection elements 44, 74 that extend between two branch points 42, 72 to define the opening areas 43, 73; and a total value of lengths of straight line segments connecting the two branch points 42, 72 is less than 20% of a total value of the plurality of connection elements 44, 74.

The invention discloses a TaN thin-film resistor for the high-temperature environment and a preparation method of the TaN thin-film resistor. The TaN thin-film resistor comprises a substrate, a resistive film, two transition metal layers and two electrodes from bottom to top sequentially, wherein the two transition metal layers are arranged on two sides of the resistive film respectively; the two electrodes are attached to the upper surfaces of the two transition metal layers respectively; the resistive film is attached to the upper surface of the substrate, is a TaN resistive film and is 100-200 nm thick; channels or holes are formed in the position, where the resistive film is connected with the transition metal layers, of the resistive film. The metal layers and the resistive layer are in embedded three-dimensional contact, the metal layers and the resistive layer in the embedded position extrude each other to be tightly contacted because of thermal expansion of the resistive layer and the metal layers when used at the high temperature, and failure caused by stripping of the metal layers is avoided, so that the resistor has better thermal stability and reliability.

The invention discloses a manufacturing method of a chip precision film resistor array. The method comprises the following steps: S1, respectively printing a back electrode and a surface electrode onthe front surface and the back surface of a substrate so as to form an electrode layer after sintering; s2, preparing dry glue through a soaking process, exposing and developing a mask pattern, and removing a mask after sputtering to obtain a resistor body, and the dry glue completely covering the whole resistor array substrate; s3, modifying the resistance value through laser resistance trimming;s4, reinforcing a protection layer through printing resin protection; s5, carrying out mark printing, specifically, printing mark slurry on the protection face, and then carrying out high-temperaturecuring; s6, strip folding: cutting the product substrate into strips from blocks; s7, carrying out side sealing, and a back electrode to a surface electrode through a silver coating process to form an end surface electrode; s8, carrying out grain folding to divide the product into grains from a strip shape; and s9, electroplating the granular product. According to the invention, the film sputtering mask shielding layer is formed through the soaking process, so that the chip resistor array is thinned to film, and the resistor quality is improved.

A method for manufacturing thin-film chip resistors, in which method a resistor layer (14) and a contact layer (15, 16) are applied onto the upper surface of a substrate (10) and structured using laser light so as to form on said substrate (10) a plurality of adjacent, separate resistor lands (24) having a predetermined approximate resistance value, allows the simplified and cheap manufacturing by performing the electrical insulation of the resistor elements (24) and the structuring of the individual resistor lands (24) for the entire resistor land simultaneously by means of a laser-lithographic direct exposure method.

The invention discloses a resistor manufacturing method, comprising: providing a metal foil; thinning the metal foil; producing photoresist on the metal foil, etching the metal foil, and forming a preset pattern on the metal foil; cleaning the residual photoresist to obtain a resistor. The method enables improved resistance for the resistor and increased temperature coefficient and high-temperature and low-temperature bidirectional stability, adhesion with an insulating base is improved, separation from the insulating base due to excessive internal stress is avoided, and the applicable range of resistance strain gauges is widened.

The invention discloses a chemical fine resistance adjusting method for a resistor embedded in a nickel-phosphorus layer, and belongs to the technical field of circuit boards. The method mainly solvesthe technical problem that a conventional resistance adjusting method cannot finely and uniformly adjust a resistance value. The method comprises firstly measuring the initial resistance value R1 ofa resistor before resistance adjustment; and obtaining the target resistance value R2 of the resistor by controlling the immersion time T of the resistor in an etchant for etching a nickel-phosphorusalloy layer. The invention discloses a chemical fine resistance adjusting etchant for a resistor embedded in a nickel-phosphorus layer. The method etches the nickel-phosphorus alloy layer uniformly, and can finely control the change of the resistance by controlling the time so as to obtain the target resistance value and improve the resistance control precision.

The invention belongs to the field of flexible FSS radar wave-absorbing structures, and more particularly to a flexible resistive film frequency selective surface, a preparation method and application thereof. The method comprises the steps of: printing a set frequency selective surface pattern on a photosensitive film, and attaching the photosensitive film to the surface of a flexible dielectric substrate; successively exposing and developing the photosensitive film on which the frequency selective surface pattern is printed in order to expose the frequency selective surface pattern on the surface of the flexible dielectric substrate; coating the surface of the developed flexible dielectric substrate with resistive conductive carbon paste, and sintering and curing the flexible dielectric substrate coated with the conductive carbon paste, wherein the cured conductive carbon paste is a resistive film; demolding the cured flexible dielectric substrate, removing the photosensitive film and the resistive film on the surface of the flexible dielectric substrate to obtain the flexible resistive film frequency selective surface. The FSS surface preparation method of the invention is simple, and can produce a large-area flexible passive resistive film frequency selective surface applied to a curved surface.

A heating element includes first and second terminals and one or more heating element segments extending between the first and second terminals. The one or more heating element segments have a circuit trace that includes at least first and second portions, the at least first and second portions configured so that a surface temperature difference exists between the at least first and second portions when a voltage is applied between the at least first and second terminals. The heating element can also be made with a three dimensional shape, including one that is generated by fastening of the heating element to one or more support plates. The heating element can also have a cylindrical shape and be disposed in an insulating medium in a tubular member to provide varied heating capability along the tubular member length.

A method of constructing a thermistor includes forming a semiconductor ceramic substrate. The method also includes coating a surface of the substrate with contact material and applying a solder mask on the contact material. The applying includes applying the solder mask to one or more portions of the contact material to leave an exposed area without the solder mask and a masked area with the solder mask. The method includes trimming the contact material at the masked area to adjust a resistance of the thermistor.

Embodiments of the present disclosure relate to a method for manufacturing an electronic component wherein the method comprises the steps of: providing a substrate and a functional layer supported by the substrate; forming a structured protective layer on one side of the substrate, the functional layer being attached to one side of the substrate, where the structured protective layer has a recess such that a portion of the functional layer is exposed; applying a dispersion comprising a solvent and a conductive component to the exposed portion of the functional layer such that the recess is at least partially filled with the dispersion; drying the dispersion to create a conductive layer; and removing the structured protection layer.