Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film resistor and manufacturing method thereof

A technology of thin film resistors and resistive layers, applied in thin film resistors, resistor manufacturing, resistors, etc., can solve problems such as increasing manufacturing costs and reducing surface roughness

Active Publication Date: 2019-04-09
SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the insulating substrate needs to be ground and polished in advance to reduce its surface roughness, which in turn will increase a lot of manufacturing costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film resistor and manufacturing method thereof
  • Thin film resistor and manufacturing method thereof
  • Thin film resistor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] This embodiment relates to a metal thin film resistor.

[0081] First, glass with a thickness of 500 μm is selected as the substrate. Then, a resistance layer is formed on the surface of the glass substrate by adopting a treatment method of ion implantation followed by plasma deposition.

[0082] In the ion implantation process, one of Ti, Ta, Cr, Ni, Al, Cu, Ag, Au, V, Zr, Mo, Nb, In, Sn, Tb, Be, Ca, Mg is selected as the target material; Preferably, Ni or Cr can be selected as the vacuum cathode arc target material. Control the process temperature of ion implantation to 600°C, vacuumize to 2×10 -1 up to 5×10 -5 Pa, and adjust the energy of the implanted ions to 50-100keV, and the implanted dose is 1.0×10 17 to 5.0×10 17 ion / cm 2 , so that the lower surface of the ion implantation layer is located at a depth of 5-50 nm below the surface of the substrate.

[0083] In the plasma deposition process, one of Ti, Ta, Cr, Ni, Al, Cu, Ag, Au, V, Zr, Mo, Nb, In, Sn, Tb, ...

Embodiment 2

[0085] This embodiment relates to an alloy thin film resistor.

[0086] First, a silicon plate with a thickness of 80 μm is selected as the substrate. Then, a resistance layer is formed on the surface of the silicon plate by using a treatment method of ion implantation followed by plasma deposition. In the process of ion implantation and plasma deposition, the composition of the alloy target material used is shown in Table 1 below, where the values ​​represent mass percentages.

[0087] components

Ni

Cr

Al

Ti

Cu

be

Ta

Au

Alloy combination 1

50

50

Alloy combination 2

40

40

20

Alloy combination 3

47

47

6

Alloy Set 4

75

15

10

Alloy combination 5

50

50

Alloy combination 6

30

20

15

10

25

Alloy combination 7

40

40

...

Embodiment 3

[0091] This embodiment relates to an alloy thin film resistor.

[0092] First, silicon dioxide with a thickness of 100 μm is selected as the substrate. Then, a resistance layer is formed on the surface of the silicon dioxide substrate by using a treatment method of ion implantation followed by plasma deposition.

[0093] In the process of ion implantation, different proportions of Ni-Cr alloys are selected and mixed with Ta, Al or Mo as the vacuum cathode arc target. Preferably, a Ni-Cr-dopant series alloy with a mass ratio of 40:40:20 or 35:55:10 is selected as the vacuum cathode arc target material, and the process temperature of ion implantation is controlled to be 600°C, and the vacuum is evacuated to 2 ×10 -1 up to 5×10 -5 Pa, and the energy of implanted ions is adjusted to 50 to 100keV, and the implanted dose is 1.0×10 17 to 5.0×10 17 ion / cm 2 , so that the lower surface of the ion implantation layer is located at a depth of 5-50 nm below the surface of the substra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a thin film resistor and a fabrication method thereof. The method for fabricating the thin film resistor (100) comprises the following steps of S1, pre-processing a substrate (10); S2, performing ion injection and / or plasma deposition processing on a surface (12) of the substrate by using a target material so as to form a resistance layer (14) on the surface of the substrate; and S3, forming electrodes (18) at two sides of the resistance layer.

Description

technical field [0001] The present invention relates to a thin film resistor and a manufacturing method thereof. The thin film resistor is especially suitable for microelectronic products and surface mount technology (Surface Mount Technology, referred to as SMT), and is used as a passive electronic circuit element and / or carrying an electronic circuit in a circuit element. Background technique [0002] Thin film resistor manufacturing technology integrates semiconductor manufacturing process and thick film manufacturing process, adopts advanced technologies and processes such as sputtering coating, heat treatment, photolithography, and laser trimming, and has developed rapidly in recent years. Chip thin film fixed resistors combine the advantages of "light, thin, short and small" of chip thick film fixed resistors with the advantages of "high precision and low temperature coefficient" of traditional precision resistors, and are a new type suitable for SMT manufacturing. Re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/00H01C17/00H01C17/075
CPCH01C7/006H01C17/00H01C17/003H01C17/075
Inventor 王志建吴香兰宋红林张志强
Owner SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com