A magnetoresistance element suitable for working at high temperature
A technology of magnetoresistance and components, applied in the field of memory, can solve the problems of data fidelity performance, weakening of the magnetization of the memory layer, etc., and achieve the effects of improving magnetic performance, high vertical anisotropy, and low magnetic resonance damping
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[0025] In describing the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", " The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplified descriptions, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the invention.
[0026] figure 1 A schematic structural diagram of a magnetoresistance element based on the present invention is shown, which includes an anisotropic auxiliary layer 1, a memory layer 2, a tunnel barrier layer 3 and a reference layer 4 in sequence, and the formation of the above-men...
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