Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A magnetoresistance element suitable for working at high temperature

A technology of magnetoresistance and components, applied in the field of memory, can solve the problems of data fidelity performance, weakening of the magnetization of the memory layer, etc., and achieve the effects of improving magnetic performance, high vertical anisotropy, and low magnetic resonance damping

Active Publication Date: 2020-08-04
SHANGHAI CIYU INFORMATION TECH
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At 100°C, the magnetization of the memory layer weakens by 10%, and at 150°C, the magnetization of the memory layer weakens by 20%, which will have a great impact on the data fidelity performance at high temperatures, and limit the potential market of MRAM (commercial grade 85°C , industrial grade 125℃, automotive industry grade 150℃)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A magnetoresistance element suitable for working at high temperature
  • A magnetoresistance element suitable for working at high temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In describing the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", " The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplified descriptions, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and thus should not be construed as limiting the invention.

[0026] figure 1 A schematic structural diagram of a magnetoresistance element based on the present invention is shown, which includes an anisotropic auxiliary layer 1, a memory layer 2, a tunnel barrier layer 3 and a reference layer 4 in sequence, and the formation of the above-men...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Curie pointaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a magnetoresistance element suitable for working at high temperature, including a reference layer, a memory layer and a tunnel barrier layer, the magnetization direction of the reference layer is constant and the magnetic anisotropy is perpendicular to the layer surface; the The magnetization direction of the memory layer is variable and the magnetic anisotropy is perpendicular to the layer surface; the tunnel barrier layer is located between the reference layer and the memory layer and is respectively adjacent to the reference layer and the memory layer; The memory layer includes a first magnetic material layer, a second magnetic material layer and a non-magnetic coupling layer, and the non-magnetic coupling layer is located between the first magnetic material layer and the second magnetic material layer for The magnetization direction coupling of the first magnetic material layer and the second magnetic material layer are consistent. The design of the magnetoresistance element provided by the present invention can improve the magnetic performance of the memory layer magnetic material under high temperature conditions under the premise of taking into account high magnetoresistance ratio, high perpendicular anisotropy and low magnetic resonance damping.

Description

technical field [0001] The invention relates to the memory field of integrated circuit chips, in particular to a magnetoresistance element suitable for working at high temperature. Background technique [0002] With the continuous progress of material science, a new type of high-performance memory - Magnetic Random Access Memory (MRAM, Magnetic Random Access Memory) is attracting people's attention. It has the high-speed read and write capabilities of static random access memory (SRAM), and the high integration of dynamic random access memory (DRAM), and can be rewritten almost infinitely. This high-speed memory has been regarded as the successor of DRAM and even flash memory. [0003] Magnetic Tunneling Junction (MTJ, Magnetic Tunneling Junction), as a data memory unit, is a key link in realizing an MRAM memory chip. The magnetic tunnel junction is a sandwich structure composed of an insulator and a magnetic material. The insulating layer in the middle separates two layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/02H10N50/10H10N50/80
CPCH10N50/80H10N50/10
Inventor 叶力
Owner SHANGHAI CIYU INFORMATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products