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Polysilicon ingot furnace

A polysilicon ingot casting furnace and furnace body technology, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of large amount of argon gas consumption and waste of resources, so as to reduce the amount of argon gas consumption and reduce the useful space Effect

Inactive Publication Date: 2017-11-14
JIANGSU XINCHAO PV ENERGY DEV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a polysilicon ingot furnace, which solves the problem that most of the current polysilicon ingot furnaces use argon circulation to protect silicon ingots, and the amount of argon is large, resulting in waste of resources.

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Embodiment Construction

[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] Such as Figure 1-4 As shown, the present invention provides a technical solution: a polysilicon ingot casting furnace, including a furnace body 1, the top of the inner wall of the furnace body 1 is fixedly embedded with a connecting pipe 2, and a round hole is opened at the bottom of the inner wall of the furnace body 1, and the round hole is rotated to connect The rotating shaft 3 is used to drive the crucible 6 to move. The upper end of the rotating ...

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Abstract

The invention discloses a polysilicon ingot furnace, which comprises a furnace body, wherein a connection pipe is fixedly inlaid into the top of the inner wall of the furnace body; a round hole is formed in the bottom of the inner wall of the furnace body; a rotating shaft is rotationally connected with the inside of the round hole; the upper end of the rotating shaft is fixedly connected with a heat-conducting block; the upper surface of the heat-conducting block is fixedly connected with a crucible guard board; the inner wall of the crucible guard board is fixedly connected with the surface of a crucible; the surface of the crucible guard board is fixedly connected with the inner wall of a large bearing; a cylinder fixedly sleeves the outside of the large bearing; the inner wall of the cylinder is rotationally connected with a fan blade; a tooth space is formed in the surface of the cylinder and meshed with a gear; and one side surface of the inner wall of the furnace body is fixedly connected with a connection block. Through arrangement of the cylinder, a three-phase asynchronous motor, a through hole, a piston, an air inlet pipe, a spring and idler wheels, the problem of resource waste due to the fact that a silicon ingot is protected by adopting argon gas circulating current and the argon gas consumption is relatively large in an existing polysilicon ingot furnace is solved.

Description

technical field [0001] The invention relates to the technical field of polysilicon production equipment, in particular to a polysilicon ingot casting furnace. Background technique [0002] Polycrystalline silicon is a form of simple silicon. Polycrystalline silicon is the direct raw material for the production of single crystal silicon. It is the electronic information basic material for semiconductor devices such as artificial intelligence, automatic control, information processing, and photoelectric conversion. It is called "the core of the microelectronics building." Cornerstone", the ingot furnace is a special equipment designed for the solar energy industry and is a necessary equipment for polysilicon ingot casting. [0003] At present, most polysilicon ingot casting furnaces use argon gas circulation to protect silicon ingots, and the amount of argon gas used is relatively large, resulting in waste of resources. Contents of the invention [0004] (1) Solved technica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 张靖田晓军姚兴平李素琴张何严磊
Owner JIANGSU XINCHAO PV ENERGY DEV