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A growth method for suppressing carbon inclusion defects in silicon carbide single crystals

A technology of silicon carbide single crystal and growth method, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of affecting the conductivity of silicon carbide substrates, complicated growth processes, fluctuations in impurity concentration, etc. The effect of volatilization and dissipation, eliminating the formation of inclusions, and ensuring unity

Active Publication Date: 2019-06-25
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will change the original raw material composition and complicate the growth process; in addition, the addition of silicon oxide will introduce additional impurities, resulting in unstable fluctuations in the impurity concentration in the crystal, which may affect the silicon carbide substrate. The conductivity of the bottom

Method used

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  • A growth method for suppressing carbon inclusion defects in silicon carbide single crystals
  • A growth method for suppressing carbon inclusion defects in silicon carbide single crystals
  • A growth method for suppressing carbon inclusion defects in silicon carbide single crystals

Examples

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Effect test

Embodiment 1

[0025] A growth method for suppressing carbon inclusion defects in silicon carbide single crystals, the specific steps of which are:

[0026] (1) After loading the silicon carbide raw material and seed crystal in the graphite crucible, put it into the single crystal growth chamber and seal the chamber, and pass protective gas into the growth chamber;

[0027] (2) After introducing protective gas into the growth chamber for 2 hours, gradually reduce the pressure in the growth chamber from 1 atmospheric pressure to 5 mbar, and at the same time, gradually increase the furnace temperature from room temperature to 2500 °C. After the pressure and temperature, keep the stable growth at this low pressure and temperature for 35h, which is the first stage of crystal growth;

[0028] (3) With the end of the first stage of growth, slowly increase the growth pressure in the growth chamber from 5mbar to 50mbar while keeping the temperature stable. After rising to the predetermined pressure,...

Embodiment 2

[0034] A growth method for suppressing carbon inclusion defects in silicon carbide single crystals, the specific steps of which are:

[0035] (1) After loading the silicon carbide raw material and seed crystal in the graphite crucible, put it into the single crystal growth chamber and seal the chamber, and pass protective gas into the growth chamber;

[0036] (2) After the protective gas was introduced into the growth chamber for 3 hours, the pressure in the growth chamber was gradually reduced from 1 atmospheric pressure to 50 mbar, and at the same time, the furnace temperature was gradually raised from room temperature to 2500 °C. After the pressure and temperature, keep the stable growth at this low pressure and temperature for 50h, which is the first stage of crystal growth;

[0037] (3) With the end of the first stage of growth, slowly increase the growth pressure in the growth chamber from 50mbar to 100mbar while keeping the temperature stable. After rising to the predet...

Embodiment 3

[0043] A growth method for suppressing carbon inclusion defects in silicon carbide single crystals, the specific steps of which are:

[0044] (1) After loading the silicon carbide raw material and seed crystal in the graphite crucible, put it into the single crystal growth chamber and seal the chamber, and pass protective gas into the growth chamber;

[0045] (2) After the protective gas was introduced into the growth chamber for 4 hours, the pressure in the growth chamber was gradually reduced from 1 atmospheric pressure to 25 mbar, and the furnace temperature was gradually increased from room temperature to 2000 °C. After the pressure and temperature, keep the stable growth at this low pressure and temperature for 20h, which is the first stage of crystal growth;

[0046] (3) With the end of the first stage of growth, slowly increase the growth pressure in the growth chamber from 25mbar to 75mbar while keeping the temperature stable. After rising to the predetermined pressure...

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Abstract

The present invention relates to the technical field of crystal growing, and specifically relates to a growing method inhibiting carbon inclusion defects in silicon carbide monocrystals. The method described in the present invention divides growth into two phases, inhibiting volatilization and escape of a silicon component by means of controlling different pressures, decreasing, or even eliminating, formation of inclusions; the growing method described in the present invention does not require addition of an external substance to growing raw materials, as inhibition of carbon inclusion formation may be realized by means of only simple adjustments of growing techniques, the method being easily implemented and relatively low-cost.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a growth method for suppressing carbon inclusion defects in silicon carbide single crystals. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, RF devices, optoelectronic devices and other fields. The current mainstream silicon carbide single crystal growth technology is the physical vapor transport (PVT) method, that is, the gas phase source generated by the sublimation of silicon carbide raw materials is transported to the seed crystal at high temperature for recrystallization. [0003] The growth process of silicon carbide single crystal grown by PVT method is carried out in a closed graphite crucible, so the growth environment at high temperature is in a carbon-rich atmosphere. In the early stage of crystal growth, because the vapor partial pressur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/002C30B29/36
Inventor 高超宗艳民李长进李加林
Owner SICC CO LTD
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