A semiconductor light-emitting element and its preparation method

Abstract

The invention belongs to the field of semiconductor technology, and in particular relates to a semiconductor light-emitting element and a preparation method thereof. The invention grows a high-energy-level first capping layer and a second capping layer between a final barrier layer and an electron blocking layer at a low temperature. The first The cover layer is an undoped layer grown at a relatively low temperature, which is used to reduce the diffusion of P-type impurities to the multi-quantum well structure layer, resulting in a decrease in luminous efficiency. The second cover layer is a hole injection layer, which is doped with high-concentration P-type impurities to The hole injection effect is improved, and at the same time, the higher energy levels of the first capping layer and the second capping layer are used to effectively reduce electron overflow and improve the luminous efficiency of the semiconductor element.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a semiconductor light-emitting element and a preparation method thereof. Background technique [0002] GaN-based light-emitting diodes include a P-N junction that converts electrical energy into light energy, and an N-type semiconductor layer for providing electrons and a P-type semiconductor layer for providing holes. When a forward voltage is applied to the light-emitting diode, the N-type semiconductor layer Electrons of the semiconductor layer are combined with holes of the P-type semiconductor layer, so that energy corresponding to an energy gap between a conduction band and a valence band may be released. The energy is mainly manifested as heat or light, and the light emitting diode emits the energy as light. [0003] However, when growing the P-type semiconductor layer, because of its growth temperature and conditions, the doping material Mg of the P-ty...

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Problems solved by technology

[0003] However, when growing the P-type semiconductor layer, because of its growth temperature and conditions, the doping material Mg of the P-type semiconductor is easily diffused from the P-type semiconductor layer into the quantum well structure layer, which affects the material quality of the potential well layer in the quantum well structure layer. , leading to a decrease in the luminous efficiency of semiconductor components. Therefore, we urgently need to find a preparation method and a semiconductor structure to suppress the diffusion of Mg and prevent the luminous efficiency of semiconductor components from decreasing.

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