Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of SiC high-voltage power device junction terminal

A technology of high-voltage power devices and junction terminals, which is applied in the field of preparation of SiC-based high-voltage power device junction terminals, can solve the problems of reducing device reliability and repeatability, increasing device complexity and manufacturing costs, and improving reliability and repeatability. performance, saving device manufacturing cost, and reducing manufacturing cost

Inactive Publication Date: 2018-01-05
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if multi-level steps are prepared by preparing one step in each etching process, this will greatly increase the complexity and cost of device preparation, and at the same time, dozens of times of etching will greatly reduce the reliability of the device. and repeatability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of SiC high-voltage power device junction terminal
  • Preparation method of SiC high-voltage power device junction terminal
  • Preparation method of SiC high-voltage power device junction terminal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0019] Using the present invention to prepare SiC high-voltage power devices with 16 steps as an example, a total of 5 etchings, according to Figure 1-Figure 8 The schematic diagram of the preparation of the junction terminal of the SiC high-voltage power device is shown, and the specific preparation steps are as follows:

[0020] Step 1: Provide a piece of SiC material structure for preparing a high-voltage power device. Such as figure 1 As shown, the thickness of the SiC layer material layer for preparing the junction terminal in the SiC material layer is D. The semiconductor material may be Si material, SiC material, GaN material, AlN material and the like.

[0021] Step 2: Proceed Level etching makes 1 step. A silicon oxide layer is deposited on the SiC material layer, and the first-level well area is defined by photolithography. Aft...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a SiC high-voltage power device junction terminal. Firstly, according to blocking voltage requirement of different levels, a number (2n) of steps is determined and the mask pattern structure design is carried out; then a multi-level step structure is formed on a SiC sample through multiple times of step preparation process (including preparing a hardmask layer, etching a step region, and removing a silicon oxide hard mask layer), and finally steps of 2n levels are formed through (n+1) times of step etching. For making the SiC high-voltage powerdevice junction terminal with the steps of multiple levels, the terminal can be prepared only with very few times of step etching, thus while the steps of multiple levels can be realized and SiC high-voltage power device blocking voltage is greatly raised, the preparation process of the multi-step junction terminal can be greatly simplified, and thus the method has a great application prospect inthe SiC high-voltage power device.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuit (ULSI) manufacturing technology, and specifically relates to a method for preparing a junction terminal of a SiC-based high-voltage power device. Background technique [0002] The basic characteristics of power semiconductor devices are high voltage, high current and high temperature resistance, which requires their manufacturing materials to have wide band gap, high critical avalanche breakdown electric field strength and high thermal conductivity. Compared with traditional silicon materials, silicon carbide has comprehensive superior physical properties (high breakdown electric field strength, superior thermal stability, high carrier saturation drift velocity and high thermal conductivity), making it suitable for high temperature, high frequency, The application fields of high power and radiation resistance are very popular, and it is an ideal material for realizing ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/04H01L29/06
Inventor 李志强李俊焘徐星亮张林代刚
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com