Preparation method for carbon doped carbon nitride film electrode

A thin-film electrode, carbon nitride technology, applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc. Uniformity, incomplete separation of electrons and holes, etc., to achieve effective separation of electrons and holes, good optoelectronic properties, and low cost.

Active Publication Date: 2018-01-12
HUNAN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Due to the small specific surface area of ​​carbon nitride thin film electrodes prepared by traditional methods, there are still shortcomings such as incomplete separation of electrons and holes, slow electron transport speed, and recombination.
At present, the graphite phase carbon nitride powder is usually prepared on the surface of the electrode material by methods such as drop coating and dip coating, and the obtained graphite phase carbon nitride powder on the electrode surface is uneven and easy to fall off, causing the electrode to be unstable.

Method used

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  • Preparation method for carbon doped carbon nitride film electrode
  • Preparation method for carbon doped carbon nitride film electrode
  • Preparation method for carbon doped carbon nitride film electrode

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Embodiment 1

[0034] Embodiment 1: the preparation of carbon-doped carbon nitride film electrode

[0035] A method for preparing a carbon-doped carbon nitride film electrode, comprising the steps of:

[0036] S1, using melamine, cyanuric acid and barbituric acid as raw materials to prepare carbon-doped carbon nitride;

[0037] S1-1. Take 10g of melamine, 10g of cyanuric acid, and 1g of barbituric acid, grind them, dissolve them in 100ml of water, mill them with a speed of 300r / min for 0.5h, stir them for 2h, and dry them on an electric furnace to obtain a precursor body.

[0038] S1-2. Put the precursor in a muffle furnace, heat it up to 550°C at a heating rate of 2.5°C / min, and keep it at 550°C for 4 hours. After natural cooling, take out the block, grind it for 20 minutes, and dissolve it with water and ethanol respectively. Rinse 3 times, filter, and dry at 80°C for 12 hours to obtain porous carbon-doped carbon nitride.

[0039] S2. Dissolving the carbon-doped carbon nitride obtained ...

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Abstract

The invention discloses a preparation method for a carbon doped carbon nitride film electrode. The preparation method comprises the following steps: S1, preparing carbon doped carbon nitride with melamine, cyanuric acid and barbituric acid as raw materials; and S2, dissolving the carbon doped carbon nitride obtained in the step S1, coating the dissolved carbon doped carbon nitride onto pretreatedtin dioxide transparent conductive glass, and carrying out baking so as to obtain the carbon doped carbon nitride film electrode. The preparation method provided by the invention has the advantages ofsimple process, low cost, etc.

Description

technical field [0001] The invention relates to the field of non-metallic semiconductor carbon nitride materials, in particular to a method for preparing a carbon-doped carbon nitride film electrode. Background technique [0002] With the gradual shortage of fossil energy, more and more people turn their attention to renewable energy such as solar energy. Semiconductor photocatalysis technology has attracted extensive attention of researchers, and it can also solve many problems of energy and environment. The photocatalytic process mainly includes the following three stages: (1) light capture, (2) separation and transport of photogenerated carriers, and (3) reactants react at the interface. However, photogenerated carriers are prone to recombination. In order to avoid such unfavorable factors and further improve the conversion efficiency of solar energy, it is necessary to design a photocatalyst with high separation efficiency. Photoelectric materials can be used as light...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J35/10
Inventor 周成赟曾光明黄丹莲赖萃张辰程敏胡亮熊炜平秦蕾文晓凤温铭
Owner HUNAN UNIV
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