Fin field effect transistor and forming method thereof

Abstract

The invention discloses a fin field effect transistor and a forming method thereof. The forming method comprises steps: a substrate comprising an NMOS area is provided, wherein convex fin parts are arranged on the substrate, isolation structures covering the side walls of the fin parts are arranged on the substrate, and the top part of the isolation structure is lower than the top part of the finpart; a gate structure is formed on the isolation structure and crosses the fin part; an N area mask lateral wall is formed on the fin part side wall in the NMOS area; the partial thickness of the finparts at two sides of the gate structure in the NMOS area is etched and removed, and the NMOS area fin part after etching and the N area mask lateral wall form an N area groove; an intrinsic blockinglayer is formed on the fin part exposed on the side wall of the N area groove; and an N-type doped epitaxial layer fully filling the N area groove is formed on the intrinsic blocking layer. Doped ions in the N-type doped epitaxial layer can be prevented from being diffused in a channel area below the gate structure, and the electrical performance of the formed fin field effect transistor is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a fin-type field effect tube and a forming method thereof. Background technique [0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of the MOSFET has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0003] However, as the channel length of the device is shortened, the distance between the source and drain of the device is also shortened. As a result, the gate's ability to control the channel becomes worse, and the gate voltage pinches off the channel. The difficulty of this is increasing, making the phenomenon of subthreshold ...

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Problems solved by technology

[0005] However, the performance of the fin field effect transistor formed by the prior art needs to be further improved

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