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Manufacturing method for removing DBR film

A production method and film technology, which are applied in the field of DBR film removal, can solve the problems of high density, increase production time and cost, and difficult to remove DBR film, and achieve the effect of improving removal rate and facilitating removal.

Active Publication Date: 2018-01-23
FOSHAN NATIONSTAR SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the current DBR film production process has a low yield rate, and the unqualified DBR film layer needs to be reworked after being formed. The rework process refers to removing the DBR film layer first, and then forming a new DBR film layer.
Due to the high density of the DBR film layer, it is difficult to completely remove the DBR film layer by the wet soaking BOE solution currently used, and repeated removal treatments are required, thereby increasing production time and cost

Method used

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  • Manufacturing method for removing DBR film
  • Manufacturing method for removing DBR film
  • Manufacturing method for removing DBR film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] A method for removing a DBR film layer, comprising:

[0076] providing a sapphire substrate;

[0077] An epitaxial layer is formed on the sapphire substrate, and the epitaxial layer includes an N-type gallium nitride layer, an active layer and a P-type gallium nitride layer arranged on the surface of the sapphire substrate in sequence, and the thickness of the epitaxial layer is 6μm;

[0078] A transparent conductive layer doped with aluminum zinc oxide is formed on the surface of the P-type gallium nitride layer, and the thickness of the transparent conductive layer is

[0079] Etching the transparent conductive layer and the epitaxial layer to form a dicing line that penetrates the transparent conductive layer and extends to the first semiconductor layer;

[0080] forming a first electrode on the first semiconductor layer, and forming a second electrode on the transparent conductive layer;

[0081] forming a passivation layer on the surface of the transparent con...

Embodiment 2

[0088] A method for removing a DBR film layer, comprising:

[0089] providing a sapphire substrate;

[0090] An epitaxial layer is formed on the sapphire substrate, and the epitaxial layer includes an N-type gallium nitride layer, an active layer and a P-type gallium nitride layer arranged on the surface of the sapphire substrate in sequence, and the thickness of the epitaxial layer is 6μm;

[0091] A transparent conductive layer doped with aluminum zinc oxide is formed on the surface of the P-type gallium nitride layer, and the thickness of the transparent conductive layer is

[0092] Etching the transparent conductive layer and the epitaxial layer to form a dicing line that penetrates the transparent conductive layer and extends to the first semiconductor layer;

[0093] forming a first electrode on the first semiconductor layer, and forming a second electrode on the transparent conductive layer;

[0094] forming a passivation layer on the surface of the transparent con...

Embodiment 3

[0099] A method for removing a DBR film layer, comprising:

[0100] providing a sapphire substrate;

[0101] An epitaxial layer is formed on the sapphire substrate, and the epitaxial layer includes an N-type gallium nitride layer, an active layer and a P-type gallium nitride layer arranged on the surface of the sapphire substrate in sequence, and the thickness of the epitaxial layer is 6μm;

[0102] A transparent conductive layer doped with aluminum zinc oxide is formed on the surface of the P-type gallium nitride layer, and the thickness of the transparent conductive layer is

[0103] Etching the transparent conductive layer and the epitaxial layer to form a dicing line that penetrates the transparent conductive layer and extends to the first semiconductor layer;

[0104] forming a first electrode on the first semiconductor layer, and forming a second electrode on the transparent conductive layer;

[0105] forming a passivation layer on the surface of the transparent con...

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Abstract

The invention provides a manufacturing method for removing a DBR film. The method comprises steps: an LED wafer is provided, wherein the bottom part of the LED wafer is provided with the DBR film; theDBR film is etched to form first holes; dry etching is carried out on the first hole to form second holes passing through the DBR film; and wet drying is carried out on the DBR film, and the DBR filmis removed. Photoetching is firstly carried out on the DBR film to form multiple first holes with the same specification and the same size, subsequent etching is facilitated, and the DBR film is smoothly removed finally; further, through forming the second holes, an etching solution can be permeated between the DBR film and the substrate of the wafer conveniently, the DBR film can be removed conveniently, and the DBR film removal rate is improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a method for removing a DBR film layer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses carrier recombination to release energy to form light. LED chips have low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection, etc. Many advantages. [0003] At present, in order to improve the external quantum efficiency of the LED chip, a layer of DBR film is generally evaporated on the back of the substrate of the LED chip, and the light emitted from the back of the substrate is reflected to the front of the chip through the DBR film, thereby improving The brightness of the LED chip. [0004] However, the current DBR film production process has a low yield rate, and the unqualified DBR film layer needs to be reworked after being formed. T...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/46
Inventor 艾国齐
Owner FOSHAN NATIONSTAR SEMICON
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