Manufacturing process of gallium nitride device for effectively enhancing high frequency performance
A high-frequency performance, gallium nitride technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of loss of high-frequency operating performance, reduce the maximum level of electric field, and large total capacitance, etc., to achieve improvement High-frequency performance, improved cut-off frequency, and high power gain effects
Inactive Publication Date: 2018-01-30
叶顺闵
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[0002] Gallium nitride high electron mobility transistors are very potential gallium nitride devices in high-power and high-frequency applications, such as 5G communications and terahertz image sensors; in order to overcome the inherent instability of gallium nitride devices, The structure of the source field plate emerges spontaneously; for GaN devices, the source field plate is a very important structure, the purpose is to reduce the maximum horizontal electric field of the device, but with the addition of the source field plate will cause the gate and The additional capacitance of the source makes the total capacitance larger. This capacitance is proportional to the dielectric coefficient of the material between the gate and the source. The high capacitance between the gate and the source will degrade the operating performance at high frequencies.
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[0032] see Figure 1-6 , a gallium nitride device manufacturing process that effectively improves high-frequency performance, including the following steps:
[0033] A. Deposit the first dielectric layer 6, the source electrode 1, the gate electrode 5 and the drain electrode 3 on the gallium oxide substrate 2 according to the traditional process, then deposit the second dielectric layer 7, and then at the gate electrode 5 place depositing a source field plate 4 on top of the second dielectric layer 7;
[0034] B. After step A is completed, place a photoresist 8 on top of the second dielectric layer 7, so that the height of the photoresist 8 is higher than the gate 5. The photoresist 8 is a soft material, and the upper surface will shrink after it is applied. is a flat profile for easy etching;
[0035] C. After the photoresist 8 is solidified and stabilized, the photoresist 8 is etched by dry isotropic etching, and the etching is stopped when the second dielectric layer 7 is...
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The invention discloses a manufacturing process of a gallium nitride device for effectively enhancing high frequency performance, and belongs to the field of gallium nitride manufacturing. The manufacturing process of the gallium nitride device for effectively enhancing the high frequency performance comprises the following steps that A, a first dielectric layer, a source electrode, a gate electrode and a drain electrode are deposited on a gallium compound substrate according to the conventional manufacturing process, then a second dielectric layer is deposited, and a source field plate is deposited on the second dielectric layer of the gate electrode. The air gap can be created between the gate electrode and the source field plate. The air is the material having the least dielectric coefficient, and the air gap can reduce the capacitance between the gate electrode and the source electrode so as to enhance the high frequency performance, enhance the maximum cutoff frequency and the maximum oscillation frequency. Besides, high power gain can be achieved under the same frequency or the higher operation frequency can be achieved under the same power gain without any special complex manufacturing process in the manufacturing process of the gallium nitride device, and the advantages of the source field plate can also be maintained.
Description
technical field [0001] The invention relates to the field of gallium nitride production, and more specifically, relates to a production process of a gallium nitride device that effectively improves high-frequency performance. Background technique [0002] Gallium nitride high electron mobility transistors are very potential gallium nitride devices in high-power and high-frequency applications, such as 5G communications and terahertz image sensors; in order to overcome the inherent instability of gallium nitride devices, The structure of the source field plate emerges spontaneously; for GaN devices, the source field plate is a very important structure, the purpose is to reduce the maximum horizontal electric field of the device, but with the addition of the source field plate will cause the gate and The additional capacitance of the source makes the total capacitance larger. This capacitance is proportional to the dielectric coefficient of the material between the gate and th...
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Inventor 大藤彻吴俊鹏谢明达叶顺闵
Owner 叶顺闵