Thin film transistor and its manufacturing method
A technology for thin film transistors and manufacturing methods, which are applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as negative shift of threshold voltage, increase of off-state current, and damage of thin film transistors, so as to improve performance, avoid Elevated off-state current, avoiding the effect of negative shift in threshold voltage
Active Publication Date: 2020-05-08
BOE TECH GRP CO LTD
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[0004] However, in the manufacturing process of the above-mentioned top emission device, the thin film transistor (at the channel of the active layer) will be damaged to varying degrees by the influence of external light, so that the threshold voltage will move negatively and the off-state current will rise. high problem
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[0036] In order to enable those skilled in the art to better understand the technical solution of the present invention, the thin film transistor provided by the present invention and its manufacturing method will be described in detail below with reference to the accompanying drawings.
[0037] see figure 1 , the thin film transistor provided by the embodiment of the present invention comprises a substrate 1, an anti-ultraviolet layer 2 disposed on the substrate 1, a buffer layer 3 disposed on the anti-ultraviolet layer 2, and a layer of Source layer 4 (IGZO layer), gate insulating layer 5 , gate layer 6 , dielectric layer 7 , source-drain layer 8 , passivation layer 9 , planar layer 10 and reflective anode layer 11 .
[0038] The above-mentioned anti-ultraviolet layer 2 is two layers, respectively a first anti-ultraviolet layer 21 and a second anti-ultraviolet layer 22 arranged on the first anti-ultraviolet layer 21, both of which are arranged between the substrate 1 and the...
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Abstract
The invention provides a thin film transistor and a manufacturing method thereof. The thin film transistor comprises a substrate and a buffer layer which is arranged on the first surface of the substrate and also comprises an anti-ultraviolet layer which is arranged between the substrate and the buffer layer and / or arranged on the buffer layer and / or arranged on the second surface of the substrate. According to the technical scheme of the thin film transistor and the manufacturing method thereof, the problems of threshold voltage negative movement and rising of off-state current caused by theinfluence of ultraviolet light can be avoided so that the performance of the thin film transistor can be improved.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof. Background technique [0002] Thin film transistor (TFT) is the pixel driving component of active matrix liquid crystal display (AMLCD) and active matrix organic light emitting diode (AMOLED) display, and plays an important role in realizing large-size, high-definition, high-frame-frequency displays effect. At present, the active layer materials of TFT mainly include hydrogenated amorphous silicon, low-temperature polysilicon, organic semiconductors and oxide semiconductors. Among them, oxide semiconductors have high electron mobility and good uniformity, and are suitable for driving AMLCD and AMOLED. [0003] Organic electroluminescent devices can be divided into two different types according to the light emission direction, namely bottom-emitting devices (BEOLED) and top-emitting devices (OLED). Among them, t...
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IPC IPC(8): H01L29/786H01L21/34
Inventor 张建业李伟顾鹏飞张星孙宏达
Owner BOE TECH GRP CO LTD