Diameter enlarging growth method of monocrystal diamond

Abstract

The invention discloses a diameter enlarging growth method of monocrystal diamond. The diameter enlarging growth method of monocrystal diamond comprises following steps: 1, an octagonal high temperature high pressure diamond substrate is selected, wherein the side surfaces of the octagonal high temperature high pressure diamond substrate are designed to be alternatively arranged {100} crystal faces and {110} crystal faces; 2, a molybdenum support is introduced into a reaction chamber, a piece of gold foil is placed on the molybdenum support, the octagonal high temperature high pressure diamondsubstrate is placed on the molybdenum support, the reaction chamber is vacuumized, the octagonal high temperature high pressure diamond substrate is heated in the reaction chamber until the gold foilis melted, and then the octagonal high temperature high pressure diamond substrate is welded onto the molybdenum support; 3, tungsten filaments are placed on a growth platform in the reaction chamber, and the molybdenum support welded with the octagonal high temperature high pressure diamond substrate is placed on the tungsten filaments for surface defect and injury etching pretreatment; and 4, the pressure, the temperature, microwave frequency, methane concentration, and growth time in the reaction chamber are controlled, so that growth of monocrystal diamond epitaxial film with a thicknessranging from 0.5 to 2.5mm on the octagonal high temperature high pressure diamond substrate obtained via pretreatment is realized. The diameter enlarging growth method is capable of reducing the content of polycrystal in the monocrystal diamond epitaxial film, and ensuring diameter enlarging effectiveness, and can be used for manufacturing of diamond field effect transistors.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a method for growing single crystal diamond, which can be used in the manufacture of various diamond semiconductor devices. technical background [0002] As a wide bandgap semiconductor material, diamond has many unique physical properties, such as high thermal conductivity, high hardness, and high carrier mobility. It is an ideal material for making power electronic devices and detectors, and can be used for high temperature, high power and strong In harsh environments with radiation. In order to achieve large-scale production of diamond devices, it is necessary to prepare large-sized diamond single crystal epitaxial films by homoepitaxial or heteroepitaxial methods. Since the use of homoepitaxial growth can ensure that the grown diamond single crystal has high crystal quality, microwave plasma chemical vapor deposition MPCVD homoepitaxial diamond is currently one of t...

AI Technical Summary

Problems solved by technology

[0004] 1. For a square substrate with (100) crystal planes on all four sides, the epitaxial film grown on it tends to have (113) crystal planes at the four corners, hindering the effective expansion of the upper surface of the single crystal epitaxial film;

[0005] 2. For a square substrate with (110) crystal planes on all four sides, the epitaxial film grown on it tends to have (113) crystal planes on the four sides, which hinders the effective expansion of the upper surface of the single crystal epitaxial film

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