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Large storage window charge trapping memory based on graphene oxide quantum dots and preparation method thereof

A technology of graphene quantum dots and charge trapping, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., and can solve problems such as reducing operating voltage

Active Publication Date: 2018-02-09
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the operating voltage of these memories is still high, the charge-trapping layer using new materials achieves fast reading and writing and high stability of the memory, and there is still room for reducing the operating voltage

Method used

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  • Large storage window charge trapping memory based on graphene oxide quantum dots and preparation method thereof
  • Large storage window charge trapping memory based on graphene oxide quantum dots and preparation method thereof
  • Large storage window charge trapping memory based on graphene oxide quantum dots and preparation method thereof

Examples

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Embodiment 1

[0038] Example 1 Large storage window charge trap memory based on graphene oxide quantum dots

[0039] like figure 2As shown, the large storage window charge trapping memory based on graphene oxide quantum dots provided by the present invention has a structure including the bottom substrate 1, an oxide dielectric layer on the substrate 1, and an electrode film on the oxide dielectric layer Layer 5.

[0040] The substrate 1 is a p-type Si substrate;

[0041] The oxide dielectric layer is a composite structure of a silicon dioxide tunneling oxide layer 2, a charge trapping layer 3 and an aluminum oxide blocking oxide layer 4, wherein the charge trapping layer 3 is sequentially composed of the first zinc oxide film layer 3-1 from bottom to top. , a single-layer graphene oxide quantum dot layer 3-2, and a second zinc oxide film layer 3-3; wherein, the thickness of the silicon dioxide tunneling oxide layer 2 is 2-5nm, and the thickness of the aluminum oxide blocking oxide layer ...

Embodiment 2

[0043] Example 2 Preparation method of large storage window charge trap memory based on graphene oxide quantum dots

[0044] (1) Forming an oxide dielectric layer on the substrate.

[0045] ①. Selection and processing of substrate materials

[0046] Select p-type Si (100 crystal orientation) as the substrate, place the substrate in acetone and clean it ultrasonically for 10 minutes, then put it in alcohol and clean it ultrasonically for 10 minutes, then take it out with clips and put it into deionized water and clean it ultrasonically for 5 minutes Minutes, then take it out and use nitrogen (N 2 ) and blow dry; then soak the substrate in a hydrofluoric acid solution diluted with deionized water, take it out and clean it again with ultrasonic waves in deionized water for 5 minutes, and then take it out with N 2 Blow dry to clean the treated Si substrate.

[0047] ② Growth of silicon dioxide tunneling oxide layer

[0048] Fix the cleaned Si substrate in a rapid thermal oxida...

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Abstract

The invention discloses a large storage window charge trapping memory based on graphene oxide quantum dots and a preparation method thereof. The structure of the memory is that an oxide dielectric layer and a Pd electrode film layer are formed on a Si substrate in turn, wherein the oxide dielectric layer comprises a silica tunneling layer, a ZnO / GOQDs / ZnO charge trapping layer and an aluminum oxide barrier layer which are formed in turn. According to the charge trapping memory based on the graphene oxide quantum dots, a large storage window (2.7V) is presented under the low operation voltage (+ / -7V). The storage window obviously increases when the operation voltage changes to 7V from 6V. The loss amount of high state capacitance and low state capacitance is 0.5pF (1.4%) and 0.3pF (6.9%) during the holding test time of 104s so that the relatively stable data holding characteristic is presented. The excellent storage performance meets the development requirements of low operation voltage, low power consumption, high storage density and high stability of the current memory field.

Description

technical field [0001] The invention relates to a charge-trap memory, in particular to a graphene oxide quantum dot-based charge-trap memory with a large storage window and a preparation method thereof. Background technique [0002] Nonvolatile memories (Nonvolatile Memories, NVM) have received great attention in the semiconductor memory industry. Non-volatile memory can store and read information in bytes. It has the advantages of high-density storage and low power consumption, and its reading and writing speeds are relatively fast. Part of non-volatile memory The speed can already approach DRAM. [0003] Charge Trapping Memory (CTM) is a widely used and important non-volatile memory. The programming speed and erasing speed of the charge trap memory are relatively fast, and it has strong tolerance, can realize a high number of repeated operations, and can maintain data for a long time, and has good reliability. At the same time, the power consumption of the charge trap m...

Claims

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Application Information

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IPC IPC(8): H01L27/11568
CPCH10B43/30
Inventor 闫小兵贾信磊王宏杨涛
Owner HEBEI UNIVERSITY