Etchant for copper/molybdenum-based multilayer thin film

A technology of multilayer film and etching solution, which is applied in the field of etching solution for multilayer film, can solve problems such as changes in etching rate, and achieve the effect of reducing the dosage

Active Publication Date: 2018-02-13
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
View PDF8 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, in Patent Document 1, part of the etching solution is replaced with a new solution because hydrogen peroxide is decomposed and the etching rate changes as the Cu concentration increases.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etchant for copper/molybdenum-based multilayer thin film
  • Etchant for copper/molybdenum-based multilayer thin film
  • Etchant for copper/molybdenum-based multilayer thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0147] 1.90% by mass of glycolic acid as an acidic organic acid, 3.40% by mass of malonic acid, 0.80% by mass of lactic acid, 2.20% by mass of 1-amino-2-propanol as an amine compound, and 0.90% by mass of BG as a hydrogen peroxide stabilizer. % by mass, 0.08% by mass of 5-amino-1H-tetrazole as an azole, 0.26% by mass of aluminum lactate as a precipitation preventing agent, and 75.32% by mass of water were prepared as etching solution raw materials to prepare an etching concentrate. In addition, the ratio of each component in an etching concentrate liquid is shown by the ratio with respect to the total amount at the time of mixing with the hydrogen peroxide solution mentioned later and completing an etching liquid. The same applies to the following examples and comparative examples.

[0148] 15.14% by mass of a 35% hydrogen peroxide solution (5.3% by mass of hydrogen peroxide and 9.84% by mass of water relative to the total amount of the etching solution) was mixed with the etc...

Embodiment 2

[0150] 1.90% by mass of glycolic acid as an acidic organic acid, 3.40% by mass of malonic acid, 0.80% by mass of lactic acid, 2.20% by mass of 1-amino-2-propanol as an amine compound, and 2.00% of BG as a hydrogen peroxide stabilizer % by mass, 0.08% by mass of 5-amino-1H-tetrazole as an azole, 0.26% by mass of aluminum lactate as a precipitation preventing agent, and 74.22% by mass of water were prepared as etching solution raw materials to prepare an etching concentrate.

[0151] 15.14% by mass of a 35% hydrogen peroxide solution (5.3% by mass of hydrogen peroxide and 9.84% by mass of water relative to the total amount of the etching solution) was mixed with the etching concentrate to prepare an etching solution having a hydrogen peroxide concentration of 5.3% by mass. In addition, water was 84.06 mass % in total. Further, copper lactate was added to adjust the copper ion concentration to 8000 ppm. In addition, molybdenum powder was added to adjust the molybdenum concentrat...

Embodiment 3

[0153] Contains 1.90% by mass of glycolic acid as an acidic organic acid, 3.40% by mass of malonic acid, 0.80% by mass of lactic acid, 2.20% by mass of NNDPA as an amine compound, 0.40% by mass of BG as a hydrogen peroxide stabilizer, and 0.40% by mass of BG as a hydrogen peroxide stabilizer. 0.08% by mass of 5-amino-1H-tetrazole, 0.26% by mass of aluminum lactate as a precipitation preventing agent, and 75.82% by mass of water were prepared as etching solution raw materials to prepare an etching concentrate.

[0154] 15.14% by mass of a 35% hydrogen peroxide solution (5.3% by mass of hydrogen peroxide and 9.84% by mass of water relative to the total amount of the etching solution) was mixed with the etching concentrate to prepare an etching solution having a hydrogen peroxide concentration of 5.3% by mass. In addition, water was 85.66 mass % in total. Further, copper lactate was added to adjust the copper ion concentration to 8000 ppm. In addition, molybdenum powder was adde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to an etchant capable selectively etching a copper / molybdenum-based multilayer thin film in a semiconductor device comprising an oxide semiconductor layer and a copper / molybdenum-based multilayer thin film, characterized in that the pH is 2.5 to 5, and in comprising (A) hydrogen peroxide, (B) an inorganic acid that does not contain a fluorine atom, (C) an organic acid, (D) a C2-C10 amine compound having an amino group and at least one group selected from the amino group and the hydroxyl group, (E) an azole, and (F) a hydrogen peroxide stabilizer. This invention also relates to a method for using the etchant to selectively etch a copper / molybdenum-based multilayer thin film from a semiconductor device comprising an oxide semiconductor layer and a copper / molybdenum multilayer thin film.

Description

technical field [0001] The present invention relates to an etchant for a multilayer film, an etching concentrate, and an etching method used when etching a multilayer film of copper and molybdenum used for wiring in flat panel displays such as liquid crystal and organic EL. Background technique [0002] Aluminum is used as a wiring material for TFT (Thin Film Transistor) of flat panel displays (FPD) such as liquid crystal and organic EL (Electro-Luminescence). In recent years, large-screen and high-definition FPDs have become popular, and the wiring materials used are required to have lower resistance than aluminum. Therefore, in recent years, copper having a resistance lower than that of aluminum has been used as a wiring material. [0003] If copper is used as a wiring material, two problems arise in terms of adhesion to the substrate and diffusion to the semiconductor base material. That is, in the case of using the gate wiring, even if a sputtering method with a relati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 着能真渊上真一郎
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap