High temperature condition semi-transparent material spectral emissivity measurement device and method

Abstract

The invention discloses a high temperature condition semi-transparent material spectral emissivity measurement device and method. The device comprises a Fourier infrared spectrometer, a black body radiation source, a conversion optical path, a heating device, a sample cavity device, a conduction rail, a data acquirer and personal computers, and the Fourier infrared spectrometer is connected with the first personal computer; the black body radiation source is controlled by a numerical PID controller; the heating device is controlled by a temperature controller; a sample cavity is put on the conduction rail, a semi-transparent sample is fixed to the sample cavity, a thermocouple is fixed to the surface of the sample and is connected with the data acquirer, and the data acquirer is connectedwith the second personal computer. Through the quickly moving sample, background radiation when the semi-transparent material emissivity is measured by the heating device is removed to measure the emissivity, and the emissivity measurement principle is consistent to a non-transparent material emissivity measurement principle; the device is simple in design structure and operating step and high inmeasurement precision.

Description

technical field [0001] The invention belongs to the technical field of thermophysical property measurement of high-temperature materials, in particular to a device and method for measuring spectral emissivity of translucent materials under high-temperature conditions. Background technique [0002] Translucent media are widely used in scientific fields such as energy and power, aerospace, information and communication, including thermal protection coatings on gas turbine blades, thermal barrier protection materials on the outer surfaces of missiles and rockets, thermal imager lenses, photoelectric detection Infrared optical materials for system windows, etc. [0003] With the development of national defense technology and material science, the demand for radiation characteristics of translucent materials is becoming more and more urgent. For example, when designing thermal protection coatings, since radiation heat transfer plays a dominant role in structural thermal design u...

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Problems solved by technology

Currently existing translucent material spectral emissivity measurement devices mainly have problems such as high cost, complicated devices, and many measurement steps. For example, Korea’s LEE GEUN WOO et al. (KOREA RES INST OFSTANDARDS. PROPERTIES FOR TRANSPARENT OR SEMITRANSPARENT MATERIALS UNDERHIGH TEMPERATURE: KR, KR20090118888A[P].2011-6-10) used the double-substrate method to measure the spectral emissivity of translucent materials. In this process, two materials need to be selected as substrates. One material has a lower emissivity and the other has a higher emissivity, and translucency is calculated by measuring the emissivity of the two substrate materials and the apparent emissivity of samples with both substrates The spectral emissivity of the material, it can be seen that the number of times required to obtain a measurement of the spectral emissivity of the translucent material is 4 times; while Manara in Germany uses the black body boundary condition method to measure the emissivity of the translucent ceramic material. Measure the apparent radiation intensity of translucent samples under blackbody boundary conditions, and then calculate the sample emissivity according to the measurement results. This method has a large number of measurements, and the state of blackbody boundary conditions is difficult to keep stable; Wang Dalin et al. ( Harbin Institute of Technology. A high-temperature emissivity measurement device for translucent materials based on the energy method and a correction method for subtracting background radiation: China, CN201110448155.8[P].2012-7-11.) By measuring translucent samples in different environments The radiation intensity of the translucent material can be obtained by analyzing and calculating the emissivity. The device is more complicated and the measurement steps are more complicated.

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