Inverted-structure copper-indium-gallium-selenium solar cell and preparation method thereof
A technology of solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency of solar cells and complicated preparation process steps, and achieve the effects of reducing production costs, shortening the process flow, and improving photoelectric conversion efficiency
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Embodiment 1
[0039] (1) Al electrodes are deposited on the surface of the glass substrate;
[0040] The deposition method is a DC magnetron sputtering method, and the thickness of the deposited Al electrode is 500 nanometers.
[0041] (2) ZnO window layer is deposited on the surface of Al electrode;
[0042] The deposition method is a radio frequency magnetron sputtering method, and the thickness of the deposited ZnO window layer is 100 nanometers.
[0043] (3) A thin layer of Cu-In-Ga alloy is deposited on the surface of the ZnO window layer to obtain a multilayer film structure;
[0044] The deposition method is a vacuum evaporation method. The molar ratio of copper atoms to indium atoms in the deposited alloy thin layer is 4.8:1, and the molar ratio of metal copper to metal gallium is 3.6:1. The thickness of the deposited Cu-In-Ga alloy thin layer is for 5000 nm.
[0045] (4) high-temperature annealing treatment in a selenium-containing atmosphere;
[0046] The annealing temperature...
Embodiment 2
[0051] (1) Al electrodes are deposited on the surface of the glass substrate;
[0052] The deposition method is a vacuum reactive evaporation method, and the thickness of the deposited Al electrode is 100 nanometers.
[0053] (2) ZnO window layer is deposited on the surface of Al electrode;
[0054] The deposition method is a radio frequency magnetron sputtering method, and the thickness of the deposited ZnO window layer is 5000 nanometers.
[0055] (3) A thin layer of Cu-In-Ga alloy is deposited on the surface of the ZnO window layer to obtain a multilayer film structure;
[0056] The deposition method is magnetron sputtering. The molar ratio of copper atoms to indium atoms in the deposited alloy thin layer is 5:1, and the molar ratio of metal copper to metal gallium is 0.1:1. The deposited Cu-In-Ga alloy is thin The layer thickness was 100 nm.
[0057] (4) high-temperature annealing treatment in a selenium-containing atmosphere;
[0058] The annealing temperature of the ...
Embodiment 3
[0063] (1) Al electrodes are deposited on the surface of the glass substrate;
[0064] The deposition method is a pulsed laser deposition method, and the thickness of the deposited Al electrode is 1000 nanometers.
[0065] (2) ZnO window layer is deposited on the surface of Al electrode;
[0066] The deposition method is a radio frequency magnetron sputtering method, and the thickness of the deposited ZnO window layer is 3000 nanometers.
[0067] (3) A thin layer of Cu-In-Ga-Se alloy is deposited on the surface of the ZnO window layer to obtain a multilayer film structure;
[0068] The deposition method is electroless plating. The molar ratio of copper atoms to indium atoms in the deposited alloy thin layer is 5:1, and the molar ratio of metallic copper to metallic gallium is 5:1. The deposited Cu-In-Ga-Se alloy is thin The layer thickness is 3000 nm.
[0069] (4) high-temperature annealing treatment in a selenium-containing atmosphere;
[0070] The annealing temperature o...
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