Unlock instant, AI-driven research and patent intelligence for your innovation.

Treating method for crystalline silicon solar cell

A technology of solar cells and processing methods, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high cost of plant land occupation, low production efficiency, poor quality of silicon oxide films, etc., achieve compact quality and improve production efficiency , Stabilize the effect of anti-PID effect

Inactive Publication Date: 2018-02-23
DEPOSITION EQUIP & APPL SHANGHAI LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for processing crystalline silicon solar cells to solve the problems existing in the existing solar cell technology: in order to solve the problem of potential decay (PID), the quality of the silicon oxide film grown by normal temperature ozone treatment is not good and the use of thermal Oxidation furnace to grow stable silicon oxide film equipment cost, high cost of plant land occupation, and low production efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Treating method for crystalline silicon solar cell
  • Treating method for crystalline silicon solar cell
  • Treating method for crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The structure of the crystalline silicon battery device in Embodiment 1 of the present invention is described in detail as follows.

[0049] like image 3It shows that crystalline silicon solar cell equipment systems all work in a vacuum state. The vacuum state, ie the atmospheric pressure, is 10 mbar less. The structure of the crystalline silicon solar cell equipment system includes a loading chamber 31 , a pretreatment chamber 32 , a coating deposition chamber 33 , and an unloading chamber 34 . Wherein the loading chamber 31 is used to load the substrate to be processed; the pretreatment chamber 32 is used to pretreat the substrate to be processed, and the pretreatment includes oxidation treatment so that the substrate surface forms a dense Silicon oxide film.

[0050] In some embodiments of the present invention, the coating deposition chamber 33 is used for coating deposition on the substrate to be processed, the coating deposition chamber includes a front anti-r...

Embodiment 2

[0077] The structure of the crystalline silicon battery device in Embodiment 2 of the present invention is described in detail as follows.

[0078] like Image 6 The crystalline silicon solar cell equipment system includes a vacuum system and a non-vacuum system. The vacuum state, ie the atmospheric pressure, is 10 mbar less. The non-vacuum state, that is, the atmospheric pressure is in the range of 500mbar-1013mbar. The structure of the crystalline silicon solar cell equipment system includes a loading chamber 41 , a pretreatment chamber 42 , a coating deposition chamber 43 , and an unloading chamber 44 . Wherein the loading chamber 41 is used for loading substrates to be processed. The pretreatment chamber 42 is used to pretreat the substrate to be treated, and the pretreatment includes oxidation treatment to form a dense silicon oxide film on the surface of the substrate; in some embodiments of the present invention, the coating deposition chamber 43, For performing coa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a treating method for crystalline silicon solar cell treating equipment. The treating method for a crystalline silicon solar cell comprises the following steps: carrying out oxidation treatment on a substrate to be treated in pretreatment cavity; transferring the substrate after oxidation treatment into a coating film deposition cavity; and carrying out coating film deposition on the substrate inside the coating film deposition cavity. The pretreatment cavity is used for oxidation treatment, and the equipment cost and workshop floor space cost are saved.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon solar cells, and particularly designs a method for processing crystalline silicon solar cells. Background technique [0002] Crystalline silicon solar cells suffer from a potential decay (PID) problem. The PID is the Potential Induced Degradation phenomenon (Potential Induced Degradation), which is the long-term high voltage of the component causes leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the battery, which deteriorates the passivation effect of the battery surface , which eventually leads to the reduction of FF, Isc, and Voc, making the performance of the component lower than the design standard. [0003] There are two solutions to the problem of solar cell potential decay (PID) in the prior art, please refer to figure 1 , is a schematic flow chart of conventional back passivated crystalline silicon cell...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 奚明吴红星戴虹吴堃夏马来
Owner DEPOSITION EQUIP & APPL SHANGHAI LTD