Plasmon-structured substrate and preparation method and application thereof
A technology of plasmons and substrates, which is applied in the field of substrates of perovskite-based optoelectronic devices, can solve problems affecting device stability and changing material structures, and achieve strong structural stability, convenient preparation, and high stability Effect
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[0051] The preparation method of the perovskite photodetector based on the plasmonic structure substrate is further provided below, including the following steps:
[0052] Step 1, the SiO 2 / Si substrate 1 is ultrasonically cleaned with an organic solvent, and ultrasonically cleaned in the order of acetone (10-15min)→ethanol (10-20min)→deionized water (20-30min), and finally removes the residues on the substrate with a nitrogen gun. Blow dry with ion water to get clean SiO 2 / Si substrate.
[0053] Step two, such as figure 1 As shown, the SiO obtained in the previous step 2 The Si surface of the / Si substrate 1 is plated with gold as the reflective layer 2 by electron beam evaporation coating method, and then coated with SiO by thermal evaporation coating method. 2 as insulating layer 3. In order to obtain a better film quality, the vacuum degree of the electron beam evaporation coating instrument and the thermal evaporation coating instrument should be pumped to 10 -8 ...
Embodiment 1
[0059] SEM image of a perovskite photodetector based on a plasmonic substrate Figure 5 shown, bottom-up including SiO 2 / Si substrate 1, gold film reflective layer 2, SiO 2 Insulating layer 3, positive and negative electrodes 4, gold rectangular array 5 and hole transport layer 6, CH 3 NH 3 PB 3 Absorbent layer7. Among them, the gold film reflective layer 2 is deposited on SiO by electron beam evaporation. 2 / Si substrate 1, SiO coated by thermal evaporation 2 The insulating layer 3 is on the gold film reflective layer 2, and the positive and negative electrodes 4 produced by electron beam exposure are on the SiO 2 On the insulating layer 3, 3nmTi / 50nm Au is obtained by electron beam evaporation. Gold rectangular array 5 in SiO 2 On the insulating layer 3 and between the two positive and negative electrodes 4, the material is gold, the height is 30nm, the side length is 250nm, the period is 350nm, and the array size is 30μm×30μm. (Under this radius and period, the fi...
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