High temperature resistant heat insulation coating and method for improving the service life of single crystal furnace crucible side
A technology of heat insulation and high temperature resistance, which is applied in the field of materials, can solve the problems of shortened service life of the crucible side, and achieve the effect of improving the service life
Active Publication Date: 2020-07-24
YINCHUAN LONGI SILICON MATERIALS
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Problems solved by technology
[0004] The object of the present invention is also to provide a method for improving the service life of the crucible side of a single crystal furnace, which applies high temperature resistant heat insulation paint to the inner side of the crucible side, which solves the problem that the crucible side and the quartz crucible react at high temperature and make the crucible side The problem of shortened service life
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[0016] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0017] The high-temperature-resistant and heat-insulating coating provided by the invention is composed of alumina ceramic hollow microspheres with a mass fraction of 80%, 4% silicate powder, 6% deionized water and 10% high-temperature-resistant materials through mixing and stirring. Formed, the sum of the mass fractions of the above-mentioned substances is 100%.
[0018] Illustratively, the high temperature resistant material with a mass fraction of 10% consists of 1.5% aluminum silicate fiber, 1% zirconia powder, 1% silicon carbide powder, 1% yttrium trioxide powder, 1% % dysprosium trioxide, 0.5% dolomite powder, 1% silicon nitride powder, 2% barium carbonate powder and 1% lanthanum trioxide powder are uniformly mixed.
[0019] The method for improving the service life of the crucible side of a single crystal furnace provided by the prese...
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Abstract
The invention discloses a high-temperature-resistant heat-insulation paint. The high-temperature-resistant heat-insulation paint is prepared by mixing, by weight, 80% of hollow alumina ceramic microspheres, 4% of a silicate powder, 6% of deionized water and 10% of a high-temperature-resistant material under stirring. The invention also discloses a method for prolonging service life of a crucible helper for a single crystal furnace. The method comprises the following steps: preparing the high-temperature-resistant heat-insulation paint from, by mass, 80% of hollow alumina ceramic microspheres,4% of a silicate powder, 6% of deionized water and 10% of a high-temperature-resistant material through mixing under stirring; then smearing the inner wall of the crucible helper with the paint; and subjecting the crucible helper to vacuum calcining in the single crystal furnace and then to natural cooling. The high-temperature-resistant heat-insulation paint provided by the invention has the properties of high-temperature resistance and heat insulation, and does not react with SiO2 at a high temperature. According to the method, the high-temperature-resistant heat-insulation paint is smearedonto the inner side of the crucible helper and undergoes vacuum calcining, so the crucible helper is prevented from reaction with a quartz crucible; and thus, the service life of the crucible helper is prolonged.
Description
technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a high-temperature-resistant heat-insulating coating, and also relates to a method for improving the service life of a crucible side of a single crystal furnace by using the high-temperature-resistant heat-insulating coating. Background technique [0002] Today, when the global resources are increasingly scarce, the use of solar energy is favored by people, and the photovoltaic power generation industry is also developing rapidly. In the process of photovoltaic power generation, monocrystalline silicon wafers are mostly used to receive and convert solar energy, and monocrystalline silicon wafers are generally used directly. Single crystal pulling method is used for drawing. When using the Czochralski method to produce single crystal silicon wafers, a single crystal furnace is required. The crucible support and crucible side are important thermal field components in t...
Claims
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IPC IPC(8): C04B30/02C30B29/06C30B15/10
CPCC04B30/02C04B2111/00482C04B2111/28C30B15/10C30B29/06C04B18/027C04B14/04C04B14/4656C04B14/306C04B14/324C04B14/30C04B14/28C04B14/328C04B14/26
Inventor 杨东梁永生冉瑞应栗宁韩欢
Owner YINCHUAN LONGI SILICON MATERIALS