Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Methods for surface preparation of sputtering target

一种溅射靶、喷射喷嘴的技术，应用在抛光溅射靶,处理溅射靶领域，能够解决花费时间和金钱等问题

Active Publication Date: 2018-03-06
MATERION
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes the burn-in process cost a lot of time and money

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Methods for surface preparation of sputtering target
  • Methods for surface preparation of sputtering target
  • Methods for surface preparation of sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Embodiment 1: hot-pressed ruthenium (Ru) target

[0055] A ruthenium (Ru) sputtering target with a diameter of 165 mm and a thickness of 3.8 mm was sintered, followed by machining and mechanical grinding steps. This was followed by bead blasting with spherical zirconia beads.

[0056] Figure 2A is an optical micrograph of the sputtering target surface after machining, ie before bead ejection. Grinding-induced defects such as surface micro-cracks, wear marks, contamination and other surface defects were observed on the ground surface. The surface roughness after grinding is anisotropic. In the direction parallel to the grinding direction, the surface roughness is 3-7 Ra, whereas in the direction transverse to the grinding direction, the surface roughness is 8-12 Ra.

[0057] Figure 2B is an optical micrograph of the sputtering target surface after bead blasting. Grinding-induced defects are overcome by bead jetting. A uniformly clean surface was also observed af...

Embodiment 2

[0063] Embodiment 2: cast iron-boron-cobalt (Fe x co y B 20 )target

[0064] Iron-cobalt-boron (Fe x co y B 20 ) sputtering target followed by a mechanical grinding step followed by bead blasting with zirconia beads.

[0065] Figure 3A is an optical micrograph of the sputtering target surface after mechanical grinding and before bead jetting. Grinding-induced defects such as surface micro-cracks, wear marks and contamination were observed on the ground surface.

[0066] Figure 3B is an optical micrograph of the sputtering target surface after bead blasting, dust blowing and surface wiping. Grinding-induced defects are overcome by bead jetting. A uniform and clean surface was observed after bead blasting. Fe x co y B 20 Cast sputtering targets of the alloy exhibit high density and high hardness (55-66 HRC). After bead jetting, there were less than 100 particles in the range of 0.1 μm to 1 μm during sputtering. Fe after bead blasting, dust blowing and surface wip...

Embodiment 3

[0067] Example 3: MgO sputtering target

[0068] Magnesia (MgO) sputtering targets with a diameter of 175 mm and a thickness of 5 mm made by sintering were subjected to a mechanical grinding step followed by bead blasting with spherical zirconia beads.

[0069] Figure 4A is the optical micrograph of the machined sputtering target surface. Machining-induced microcracks and aggregated MgO particles were observed. The surface roughness in the direction parallel to the grinding line is 31-37Ra, and the surface roughness in the direction transverse to the grinding line is 35-39Ra.

[0070] Figure 4B is an optical micrograph of the sputtering target surface after bead blasting. The surface roughness becomes isotropic (about 98-126 Ra) in the two crossing directions. Although the surface roughness increased after bead blasting, marks caused by machining were removed by bead blasting. Aggregated and loosely bound particles are also wiped off. This surface structure and charac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
sizeaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

Methods for finishing a sputtering target to reduce particulation and to reduce burn-in time are disclosed. The surface of the unfinished sputtering target is blasted with beads to remove machining-induced defects. Additional post-processing steps include dust blowing-off, surface wiping, dry ice blasting, removing moisture using hot air gun, and annealing, resulting in a homogeneous, ultra-clean,residual-stress-free, hydrocarbon chemicals-free surface.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Patent Application Serial No. 62 / 162,173, filed May 15, 2015, the entire contents of which are hereby incorporated by reference. Background technique [0003] The present disclosure relates to a method for processing a sputtering target for obtaining a sputtering target which has reduced dust collection during sputtering and requires less burn in time for optimal operation. Also disclosed are the sputtering targets themselves and methods for making such targets. [0004] The source material is deposited in the form of a thin film onto a substrate by sputtering (eg, in microelectronics applications). The source material to be deposited forms a rectangular or circular or other geometrically shaped sputter target. The sputter target is then bombarded with a beam of energetic particles (eg, an ion beam or plasma beam) in a controlled environment. Atoms of a source materia...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24C1/00B24C1/08B24C11/00C23C14/34H01J37/34
CPCH01J37/3491C23C14/3414H01J37/3426B24C1/003B24C11/00B24C1/08C23C14/021
Inventor 马龙舟杨兴波德洋·斯托亚科夫基亚瑟·V·泰斯塔尼罗马修·J·康美茨
Owner MATERION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com