Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SOI material using nitride film as insulating buried layer and preparation method thereof

A technology of insulating buried layer and silicon nitride thin film, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as cracking and inapplicable SOI material preparation, and achieve reducing internal stress, increasing quality, Effect of reducing warpage variation

Active Publication Date: 2018-03-09
SHENYANG SILICON TECH
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The method of CVD is usually used to deposit silicon nitride film at high temperature, but this method is due to the high tensile stress after deposition (up to 10 10 dyne / cm 2 ), more than a certain thickness is prone to cracking, and is not suitable for the preparation of SOI materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SOI material using nitride film as insulating buried layer and preparation method thereof
  • SOI material using nitride film as insulating buried layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] This embodiment is to prepare the SOI material forming the top layer silicon film / silicon oxynitride film / silicon nitride film / silicon oxynitride film / silicon substrate, and the thickness of each layer is 20nm / 10nm / 60nm / 10nm / 725μm respectively. Specific steps are as follows:

[0028] 1) Use 8-inch P-type silicon wafers with a resistivity of 8.5-11.5ohm.cm, crystal orientation , and a thickness of 725μm as the device substrate and supporting substrate.

[0029] 2) Use HF, H in turn 2 SO 4 and H 2 o 2 The mixed solution and deionized water were used to ultrasonically clean the device substrate and the support substrate successively, and put them into the reaction chamber of the PECVD equipment after being dried.

[0030] 3) The device substrate and the support substrate are cleaned in situ by hydrogen plasma, the flow rate of hydrogen gas is 50 sccm, and the cleaning time is 20 minutes.

[0031] 4) Depositing a silicon oxynitride film on the device substrate or the s...

Embodiment 2

[0042] This example is to prepare the SOI material for forming the top layer silicon film / silicon oxynitride film / silicon nitride film / silicon oxynitride film / silicon substrate, and the thickness of each layer is 13.5 μm / 0.5 μm / 4 μm / 0.5nm / 675 μm . Specific steps are as follows:

[0043] 1) Select a 6-inch N-type silicon wafer with a resistivity of 4-7ohm.cm, crystal orientation , and a thickness of 675 μm as the device substrate and supporting substrate.

[0044] 2) Use HF, H in turn 2 SO 4 and H 2 o 2 The mixed solution and deionized water were used to ultrasonically clean the device substrate and the support substrate successively, and put them into the reaction chamber of the PECVD equipment after being dried.

[0045] 3) The device substrate and the supporting substrate are cleaned in situ by hydrogen plasma, the flow rate of hydrogen gas is 70 sccm, and the cleaning time is 15 minutes.

[0046] 4) Depositing a silicon oxynitride film on the device substrate or the s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an SOI material using a nitride film as an insulating buried layer and a preparation method thereof, and belongs to the field of manufacturing technology of semiconductor materials. A composite nitride insulating film with good thermal conductivity and compact structure is prepared using a PECVD method and combined with hydrogen ion implantation, wafer bonding, annealing, polishing, microwave cracking and other processes to prepare an SOI structure using silicon oxynitride / silicon nitride / silicon oxynitride composite film as an insulating layer. The thermal conductivity of the SOI material is superior to that of the SOI using the conventional SiO2 as an insulating buried layer SOI, and the SOI material is more suitable for high-temperature and high-power SOI circuits. In addition, the dielectric constant of silicon nitride is greater than that of SiO2 and the silicon nitride can be used as a gate dielectric candidate material.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to an SOI material with a nitride thin film as an insulating buried layer and a preparation method thereof. Background technique [0002] Due to the unique advantages of the SOI (Silicon On Insulator, silicon on insulating layer) structure, devices based on this structure will essentially reduce junction capacitance and leakage current, increase switching speed, reduce power consumption, and achieve high speed and low power consumption operation, its performance is significantly better than that of bulk silicon devices and circuits. At present, the application of SOI devices has gradually expanded from military, aerospace and industry to data processing, communication and consumer electronics and other fields. As a next-generation silicon-based integrated circuit technology, SOI technology is widely used in most fields of microelectronics, and is also app...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
CPCH01L21/7624
Inventor 李慧杨文奇
Owner SHENYANG SILICON TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com