Preparation method of regularly-bent tellurium nanowires

A tellurium nanowire and bending technology, which is applied in the field of shape-controllable preparation of semiconductor nanomaterials, can solve the problem of single shape of tellurium nanowires, and achieve the effects of simple reaction, maintenance of pH, and optimization of experimental conditions

Active Publication Date: 2018-03-23
韩金玲
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  • Abstract
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Problems solved by technology

[0005] In order to solve the shortcoming that the above-mentioned synthesized tellurium nanowires have a single shape and are all linear, the shape of the tellurium nanowires is broadened, and when other materials are synthesized using the tellurium nanowires as a hard template, the morphology and properties of the corresponding materials are changed. , the applicant, through a large number of literature research and continuous experimental improvement, proposes the following technical scheme to synthesize a regularly curved tellurium nanowire

Method used

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  • Preparation method of regularly-bent tellurium nanowires
  • Preparation method of regularly-bent tellurium nanowires
  • Preparation method of regularly-bent tellurium nanowires

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Embodiment 1

[0029] Weigh 0.1 g of sodium tellurite, dissolve it in 100 ml of deionized water magnetized by a magnetic field with a field strength of 2 T, and stir evenly to obtain solution A; under stirring conditions, add 5 g of Octyltrimethylammonium chloride, continue to stir to obtain solution B; transfer the obtained solution B to a three-necked flask, place the three-necked flask in an oil bath at 100°C for heating and stirring, then add 15ml of hydrazine hydrate and At the same time, feed nitrogen into the reaction bottle to maintain the inert atmosphere of the reaction system, and the nitrogen flow rate is controlled at 100ml / min; under constant stirring, after 30min, stop the reaction, place the reaction bottle in cold water and drop to room temperature, and you can get Final rule-bent tellurium nanowires.

Embodiment 2

[0031] Weigh 0.1 g of tellurium dioxide, dissolve it in 100 ml of deionized water magnetized by a magnetic field with a field strength of 3 T, and stir evenly to obtain solution A; Alkyltrimethylammonium chloride, continue to stir to obtain solution B; transfer the obtained solution B to a three-necked flask, place the three-necked flask in an oil bath at 110°C for heating and stirring, then add 15ml of hydrazine hydrate and simultaneously Feed nitrogen into the reaction bottle to maintain the inert atmosphere of the reaction system, and the nitrogen flow rate is controlled at 100ml / min; under constant stirring, after 30min, stop the reaction, place the reaction bottle in cold water and drop it to room temperature to obtain the final Regularly curved tellurium nanowires.

Embodiment 3

[0033] Weigh 0.5g of tellurium dioxide, dissolve it in 200ml of deionized water magnetized by a magnetic field with a field strength of 3T, and stir evenly to obtain solution A; Alkyltrimethylammonium chloride, continue to stir to obtain solution B; The solution B obtained is transferred in the three-necked flask, and the three-necked flask is placed in an oil bath at 120°C for heating and stirring, then 10ml of HI is added and simultaneously Nitrogen was introduced into the reaction bottle to maintain the inert atmosphere of the reaction system, and the flow rate of nitrogen gas was controlled at 150ml / min; under constant stirring, after 60 minutes, the reaction was stopped, and the reaction bottle was placed in cold water to cool down to room temperature, and the final rule was obtained. Bent tellurium nanowires.

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Abstract

A preparation method of regularly-bent tellurium nanowires is disclosed. By processing deionized water with a strong magnetic field, the processes deionized water and polarity thereof are greatly changed. The deionized water is different from common deionized water when used for synthesis of the nano-material. Then, under combined action of a reducing agent and a surfactant, the regular-bent tellurium nanowires which cannot be directly obtained previously are synthesized. Morphology of the tellurium nanowires is broadened. When the tellurium nanowires are used as a hard template to synthesizeother materials, morphology and performance of the corresponding materials are changed.

Description

technical field [0001] The invention relates to the technical field of shape-controllable preparation of semiconductor nanomaterials, in particular to a bend-controllable synthesis of tellurium nanowires. Background technique [0002] One-dimensional nanomaterials include nanowires, nanotubes, nanofibers, and nanobelts. Compared with zero-dimensional nanoparticles, quantum dots, two-dimensional nanosheets, and three-dimensional macro structures, the unique structure of one-dimensional nanomaterials, Especially its very high aspect ratio, which makes one-dimensional nanomaterials have good optical, electrical, acoustic and thermal properties, and the morphology of one-dimensional nanomaterials has a great influence on their properties, because When the size of the material is smaller than a certain level, such as less than 10nm, it means that the nanomaterial exhibits a strong quantum tunneling effect in a certain direction, which makes the properties of the material differen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/02B82Y40/00
CPCB82Y40/00C01B19/02
Inventor 韩金玲吕振瑞
Owner 韩金玲
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