Junction temperature test method of AlGaN/GaN high electron mobility transistor

Abstract

The invention discloses a junction temperature test method of an AlGaN/GaN high electron mobility transistor and mainly solves a problem of the relatively low measured junction temperature existing ina method in the prior art. The method comprises steps that a pulse test method is utilized to test schottky positive characteristics of a device, the change relationship between gate source resistance RS0 and Schottky series resistance RT0 along with the temperature is extracted, and the change relationship of Schottky contact resistance RB0 along with the temperature is acquired as a calibrationcurve through combining the above two factors; secondly, a bias point is selected under the room temperature condition, the pulse test method is utilized to test the Schottky forward characteristicsof the device, Schottky series resistance RT is further extracted, output characteristics of a detected device are measured, gate source resistance RS is extracted, the change relationship of Schottkycontact resistance RB under different powers is acquired, through comparing with a calibration curve, the device junction temperature is extracted. The method is advantaged in that accuracy of the junction temperature test is improved, the measurement error is reduced, and the method can be used for measurement and analysis of high electron mobility transistor devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a junction temperature testing method of an AlGaN / GaN high electron mobility transistor HEMT, which can be used for device measurement and analysis. technical background [0002] AlGaN / GaN high electron mobility transistor HEMT has a very broad development prospect in the application of high temperature and microwave high power, and has attracted extensive attention in the past few decades. This is mainly based on the excellent characteristics of GaN materials such as wide bandgap, high breakdown field strength, and high saturation electron drift velocity. Although AlGaN / GaN HEMT has great potential in the future, the thermal reliability of the device is still one of the bottlenecks restricting its development. In high-temperature applications, the significant self-heating effect of AlGaN / GaN HEMT devices will increase the junction temperature of the device and deg...

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Problems solved by technology

N.Killat et al. used the infrared method to extract the junction temperature of AlGaN/GaN HEMT devices and compared them with the Raman test results. They found that the infrared test results were far lower than the actual junction temperature of the device. See N.Killat, M.Kuball ,T.–M.Chou,etc.Temperature Assessment of AlGaN/GaN HEMTs:A Comparative study by Raman,Electrical and IR Thermography.IEEE Conference Publications,2010,528-531, the spatial resolution of the infrared method is only 2.5μm, However, the gate length of HEMT devices is generally less than 1 μm, and the source-drain distance is only a few μm. The junction temperature of the device generally appears at the edge of the gate near the drain. Therefore, the resolution of the infrared method is far from meeting the measurement requirements, resulting in measurement Th

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