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A kind of preparation method of graphene

A graphene and graphene layer technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of limiting the area of ​​graphene growth, graphene layer rupture, graphene layer film damage, etc., to achieve the goal of reducing secondary pollution possibility, simplification of the patterning process, effect of reducing the number of transfers

Active Publication Date: 2019-09-17
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are some problems in this graphene growth method, such as 1) the size of the metal substrate limits the area of ​​graphene growth; 2) the flatness and film quality of the metal substrate surface, especially the crystal orientation, will affect the deposited graphite. 3) the process of transferring graphene by spin-coating PMMA will easily cause the graphene layer to break or irregular wrinkles, and polymer residues will remain on the surface of the graphene layer, making the graphene layer Material properties are seriously affected; 4) The patterning of the graphene layer is generally achieved by plasma etching, which will cause damage to the graphene layer and the film layer below it

Method used

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preparation example Construction

[0019] A kind of preparation method of graphene layer of the embodiment of the present invention 1, this preparation method comprises the following steps:

[0020] 1) A substrate 10 is provided, and a layer of metal oxide layer 20 is deposited on the substrate 10, such as figure 1 shown;

[0021] 2) Depositing a layer of first metal layer 30 on the metal oxide layer 20 obtained in step 1), and patterning the first metal layer 30; as figure 2 shown;

[0022] 3) depositing a graphene layer 40 on the patterned first metal layer 30 obtained in step 2); as image 3 shown;

[0023] 4) Align the interface between the graphene layer 40 and the device to be transferred (not marked in the figure); then use laser to break the link between any two layers located between the substrate 10 and the first metal layer 30, Thereby the graphene layer 40 is correspondingly transferred to the interface of the device; as Figure 4 shown;

[0024] 5) All the remaining parts on the bonding surf...

Embodiment 2

[0060] The difference between the preparation method of the graphene layer in Example 2 of the present invention and Example 1 mainly lies in: step 1).

[0061] In step 1) of Embodiment 2, a second metal layer (not shown in the figure) is first deposited on the substrate, and then a metal oxide layer is deposited on the second metal layer.

[0062] The material used for the second metal layer is selected from any one of Mo, Al or Ti.

[0063] The thickness of the second metal layer is not less than 5nm and not more than 100nm.

[0064] Correspondingly, in step 4), after the alignment, the laser is used to break the link between the substrate and the second metal layer, or the laser is used to break the link between the second metal layer and the metal oxide layer, or the laser is used to break the link between the second metal layer and the metal oxide layer. The link between the metal oxide layer and the first metal layer is broken.

[0065] The other steps of embodiment 2 ...

Embodiment 3

[0068] The preparation method of the graphene layer of embodiment 3 of the present invention, after the step 5) of embodiment 1 or embodiment 2 is completed, then carry out step 6): on the surface of the graphene layer 40, make a transparent protective fixed layer (Fig. not shown). The transparent protective fixing layer is used to protect and fix the graphene layer 40 . The transparent protective fixing layer can be polyimide or silicon oxide.

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Abstract

The invention relates to a graphene preparation method. Compared to the method in the prior art, the method of the present invention has the following advantages that the patterning process of the graphene layer is simplified, the etching patterning on the graphene layer is not required, and the damage on the graphene layer is reduced; the transfer of the graphene layer is efficient, the transferquality is good, and the graphene transfer number and the possibility of the secondary pollution are reduced; the substrate can be selected from reusable quartz substrates or glass substrates, and thelike; and the first metal layer for depositing the graphene layer can be selected in a diversified manner, and the optimal condition suitable for graphene deposition can be modulated through the deposition process.

Description

technical field [0001] The invention relates to a preparation method of graphene. Background technique [0002] With the development of optoelectronic display technology, transparent electrodes play a very important role in many fields, such as light-emitting diodes, flat panel displays, touch screens, and dye-sensitized solar cells. At present, the material of the transparent electrode is mainly indium tin oxide (Indium Tin Oxide, ITO). Although the technology of using indium tin oxide as an optoelectronic component has been popularized and matured, there are still inherent disadvantages that limit its future development. For example, indium tin oxide The high cost derived from insufficient content on the earth, the instability of indium tin oxide materials in acid or alkali environments, etc. [0003] The two-dimensional structure and special properties of graphene have attracted much attention since its discovery. Graphene is currently the thinnest and strongest nanomat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
Inventor 盛晨航亢澎涛
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD