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Silicon-based mixed and integrated tunable laser and photon chip

A technology of tuning lasers and hybrid integration, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of large differences in reflectivity of different wavelengths, unfavorable broadband tunability, and high process requirements, and achieve low cost, small size, and tuning. wide range of effects

Active Publication Date: 2018-04-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

The annular reflector in these silicon-based tunable laser structures adopts an annular structure, which requires a relatively large bending radius to reduce optical loss, so the size is relatively large; the Bragg reflector has high requirements on the process, and the reflectivity difference between different wavelengths is relatively large. , which is not conducive to the realization of broadband tunable

Method used

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  • Silicon-based mixed and integrated tunable laser and photon chip
  • Silicon-based mixed and integrated tunable laser and photon chip
  • Silicon-based mixed and integrated tunable laser and photon chip

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Embodiment 1

[0045] In this embodiment, the semiconductor optical amplifier adopts the commercial 1550nm epitaxial material based on indium phosphide, and is manufactured into a single transverse mode optical amplifier through steps such as photolithography; the dual-port multimode interference mirror and the thermally tuned silicon base The double-ring resonators are all made of 220nm SOI material, the etching depth is 220nm, and the width of the tapered waveguide gradually changes from 400nm to 1.8μm; the length of the dual-port multimode interference self-imaging area is about 22μm, and the perimeters of the two rings are respectively 186 μm and 169 μm. Figure 4 It is the light field distribution diagram of the dual-port silicon-based multimode interference mirror. It can be seen that most of the light field is localized in the device to realize light reflection and transmission functions, and the light loss is relatively small. Figure 5 It is the light reflection and transmission spe...

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Abstract

Disclosed are a silicon-based mixed and integrated tunable laser and a photon chip. The laser comprises a semiconductor optical amplifier, a silicon-based spot-size converter, a thermal regulation silicon-based annular resonator, a silicon-based phase shifter and a dual-port silicon-based multi-mode interference reflecting mirror which are arranged in sequence; the dual-port silicon-based multi-mode interference reflecting mirror comprises input waveguide, output waveguide, multi-mode waveguide, and conical waveguide for enabling the input waveguide and the output waveguide to be connected with one end of the multi-mode waveguide separately; the input waveguide is connected to the output end of the thermal regulation silicon-based annular resonator; two etching surfaces with an angle of 45degrees with the waveguide axis are arranged at the other end of the multi-mode waveguide; the two etching surfaces are perpendicularly crossed and positioned on the axis of multi-mode interference self-imaging waveguide; and the laser and other silicon-based functional devices form the photon chip. The tunable laser and the photon chip disclosed in the invention have the advantages of small dimension, low cost, easy integration, and wide application prospect in the fields of integrated photoelectronics and optical communication.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a silicon-based hybrid integrated tunable laser light source and a photonic chip, which can be applied to fields such as optical interconnection, optical switching, and optical sensing. Background technique [0002] With the continuous improvement of people's requirements for information and communication, tunable lasers have gradually become an indispensable device in optical communication systems. It can not only be used as a backup light source in the wavelength division multiplexing system to save maintenance time and cost, but also can be used in any place where wavelength conversion is required in the communication system, such as data routing in the wavelength division multiplexing system, reconfigurable optical communication network, etc. There are many schemes for realizing tunable lasers, such as DBR semiconductor laser structure, DFB semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14H01S5/065
CPCH01S5/065H01S5/14
Inventor 郑婉华董风鑫刘安金
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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