A kind of preparation method of silver nanowire grid electrode

A silver nanowire, grid electrode technology, applied in nanotechnology, nanotechnology, cable/conductor manufacturing and other directions, can solve the problem of high annealing temperature, achieve the effect of simple preparation process, optimized preparation process and good support conditions

Active Publication Date: 2019-11-08
JILIN JIANZHU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for preparing a silver nanowire grid electrode for the problem of high annealing temperature when preparing silver nanowire grid electrodes in the prior art

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  • A kind of preparation method of silver nanowire grid electrode
  • A kind of preparation method of silver nanowire grid electrode
  • A kind of preparation method of silver nanowire grid electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This example is used to illustrate the preparation method of the silver nanowire grid electrode disclosed in the present invention.

[0037] (1) Clean the substrate, ultrasonically clean it in trichlorethylene, acetone, absolute ethanol, and deionized water, and dry it with nitrogen.

[0038] (2) Take an appropriate amount of silver nanowire suspension in ethanol, add a certain amount of absolute ethanol solution, and dilute the silver nanowire suspension to a concentration of 0.1 mg / ml.

[0039] (3) Specific steps for preparing silver nanowire grid structure by drop coating method: ①According to the size of the substrate, use a 1 square centimeter quartz plate this time, and use a pipette gun to take the silver nanowires diluted to 0.1 mg / ml 10 microliters of the suspension was drop-coated on the substrate, and the solution spread over the entire substrate. After the solution evaporated naturally, the silver nanowires naturally settled on the substrate by their own wei...

Embodiment 2

[0042] This example is used to illustrate the preparation method of the silver nanowire grid electrode disclosed in the present invention.

[0043] (1) Clean the substrate, ultrasonically clean it in trichlorethylene, acetone, absolute ethanol, and deionized water, and dry it with nitrogen.

[0044] (2) Take an appropriate amount of silver nanowire suspension in ethanol, add a certain amount of absolute ethanol solution, and dilute the silver nanowire suspension to a concentration of 0.1 mg / ml.

[0045](3) Specific steps for preparing silver nanowire grid structure by drop coating method: ①According to the size of the substrate, use a 1 square centimeter quartz plate this time, and use a pipette gun to take the silver nanowires diluted to 0.1 mg / ml 10 microliters of the suspension was drop-coated on the substrate, and the solution spread over the entire substrate. After the solution evaporated naturally, the silver nanowires naturally settled on the substrate by their own weig...

Embodiment 3

[0048] This example is used to illustrate the preparation method of the silver nanowire grid electrode disclosed in the present invention.

[0049] (1) Clean the substrate, ultrasonically clean it in trichlorethylene, acetone, absolute ethanol, and deionized water, and dry it with nitrogen.

[0050] (2) Take an appropriate amount of silver nanowire suspension in ethanol, add a certain amount of absolute ethanol solution, and dilute the silver nanowire suspension to a concentration of 0.1 mg / ml.

[0051] (3) Specific steps for preparing silver nanowire grid structure by drop coating method: ①According to the size of the substrate, use a 1 square centimeter quartz plate this time, and use a pipette gun to take the silver nanowires diluted to 0.1 mg / ml 10 microliters of the suspension was drop-coated on the substrate, and the solution spread over the entire substrate. After the solution evaporated naturally, the silver nanowires naturally settled on the substrate by their own wei...

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Abstract

In order to solve a problem of high annealing temperature during preparation of a silver nanowire grid electrode in the prior art, the invention provides a method for preparing a silver nanowire gridelectrode. The method comprises: S1, cleaning a substrate; to be specific, placing the substrate in trichlorin ethylene, acetone, absolute ethyl alcohol, and deionized water respectively to carry outultrasonic cleaning and then carrying out nitrogen drying; S2, preparing silver nano-wire ethanol mixed liquid; S3, with a dropping coating method, preparing a silver nanowire grid on the substrate byusing the silver nano-wire ethanol mixed liquid and then carrying out drying; and S4, placing a polyfluortetraethylene plate on the silver nanowire grid, applying pressures of below 14 kilograms on the silver nanowire grid continuously and uniformly by the polyfluortetraethylene plate at a temperature of below 100 DEG C for 5 to 35 minutes so as to form a silver nanowire grid electrode. Accordingto the invention, the temperature needed by the prepared silver nanowire grid electrode is low; and the requirement of the annealing temperature on the flexible device is met. The preparation methodis applied to photoelectric devices like an organic light emitting diode, a thin-film transistor and a solar cell.

Description

technical field [0001] The invention belongs to the field of preparation of nano-optoelectronic materials, in particular to a preparation method of a silver nanowire grid electrode. Background technique [0002] In the context of the information age, optoelectronic devices are developing rapidly. Among them, transparent conductive films are widely used as important electrode materials in various optoelectronic devices, such as organic light-emitting diodes, thin film transistors, flat panel displays and solar cells. The application prospects are very bright broad. At present, in the transparent conductive film market, metal oxide films such as indium tin oxide (ITO) occupy a major share. However, due to the insufficient content of indium in the earth's crust, the cost of ITO thin films has increased rapidly in the past decade. Moreover, with the vigorous development of organic and flexible electronic devices, traditional metal oxide conductive films cannot meet the needs o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/22H01B5/14H01B13/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01B1/22H01B5/14H01B13/00
Inventor 闫兴振杨小天迟耀丹周路初学峰王欢杨帆王超王冠达郭启
Owner JILIN JIANZHU UNIVERSITY
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