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Method for measuring contents of phosphorus, boron and arsenic impurities in silicon tetrafluoride gas

A technology of silicon tetrafluoride and gas, which is applied in the determination of arsenic, phosphorus, arsenic, boron, and impurity phosphorus in silicon tetrafluoride, and can solve the problem that there are no technical reports on the detection of impurities in silicon tetrafluoride phosphorus, boron, and arsenic, etc. question

Inactive Publication Date: 2018-04-24
GUIZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] So far, there is no technical report on the detection of phosphorus, boron, and arsenic impurities in silicon tetrafluoride gas

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The method for measuring phosphorus, boron, arsenic content in silicon tetrafluoride comprises the steps:

[0014] The first step: prepare 100ml of NaOH absorption solution;

[0015] The second step: the silicon tetrafluoride generating device is connected to the gas washing bottle and the absorbing bottle containing the above-mentioned NaOH absorbing liquid in turn through the gas pipeline device;

[0016] Step 3: Purge the gas pipeline with argon or helium inert gas for 3 hours to fully replace the air in the device;

[0017] The 4th step: after silicon tetrafluoride is produced, successively pass through the absorbing bottle of containing concentrated sulfuric acid, the concentrated sulfuric acid containing zeolite, concentrated sulfuric acid, the concentrated sulfuric acid, SiF after absorbing purification Pass into the absorbing bottle that above-mentioned NaOH absorbing liquid is filled;

[0018] The fifth step: control the absorption of SiF4 gas, the absorption ...

Embodiment 2

[0023] The method for measuring phosphorus, boron, arsenic content in silicon tetrafluoride comprises the steps:

[0024] The first step: prepare 100ml of NaOH absorption solution;

[0025] The second step: the silicon tetrafluoride gas is connected to the gas washing bottle and the absorbing bottle containing the above-mentioned NaOH absorbing liquid in turn through the gas pipeline device;

[0026] Step 3: Purge the gas pipeline with argon or helium inert gas for 3 hours to fully replace the air in the device;

[0027] The 4th step: silicon tetrafluoride gas, successively through the absorbing bottle of containing concentrated sulfuric acid, the concentrated sulfuric acid containing zeolite, concentrated sulfuric acid, the concentrated sulfuric acid, SiF after absorbing purification is passed into the absorbing bottle that above-mentioned NaOH absorbing liquid is filled;

[0028] The fifth step: control the absorption of SiF4 gas, the SiF4 gas absorption in the absorption b...

Embodiment 3

[0033] The method for measuring phosphorus, boron, arsenic content in silicon tetrafluoride comprises the steps:

[0034] The first step: prepare 100ml of NaOH absorption solution;

[0035] The second step: the silicon tetrafluoride gas is connected to the gas washing bottle and the absorbing bottle containing the above-mentioned NaOH absorbing liquid in turn through the gas pipeline device;

[0036] Step 3: Purge the gas pipeline with argon or helium inert gas for 3 hours to fully replace the air in the device;

[0037]The 4th step: silicon tetrafluoride gas, successively through the absorbing bottle of containing concentrated sulfuric acid, the concentrated sulfuric acid containing zeolite, concentrated sulfuric acid, the concentrated sulfuric acid, SiF after absorbing purification is passed into the absorbing bottle that above-mentioned NaOH absorbing liquid is filled;

[0038] The fifth step: control the absorption of SiF4 gas, the SiF4 gas absorption in the absorption bo...

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PUM

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Abstract

The invention discloses a method for measuring the contents of phosphorus, boron and arsenic impurities in silicon tetrafluoride gas. The method is characterized by comprising the following steps thata NaOH absorption solution is prepared; SiF4 which is purified after being absorbed by concentrated sulfuric acid, absorbed by concentrated sulfuric acid containing zeolite, absorbed by concentratedsulfuric acid and absorbed by concentrated sulfuric acid in sequence is introduced into an absorption bottle containing the NaOH absorption solution; the absorbed amount of the SiF4 gas is controlledto obtain a test sample, and the weight of the absorbed SiF4 gas is measured; the contents of phosphorus, boron and arsenic in the gas are analyzed by using the inductively coupled plasma atomic emission spectrometry.

Description

technical field [0001] The present invention relates to silicon halides, in particular to silicon tetrafluoride, and also to phosphorus, boron and arsenic. Specifically, it relates to a method for measuring impurity phosphorus, boron and arsenic in silicon tetrafluoride. Background technique [0002] SiF 4 It is a synthetic material of organosilicon compound, used in the production of silane, crystalline silicon, hardener of cement and artificial marble, and it can also be used as a raw material for electronic industries such as optical fibers and solar cells. There are 3%-4% fluorine associated with phosphate rock, mainly fluorapatite [Ca 10 f 2 ( PO 4)6 ] in the form of calcium fluorosilicate (CaSiF 6 ) form exists. In the process of wet phosphoric acid, the metal elements in these phosphate rocks are mixed with fluorine ( SiF 4 and HF) escape and absorb in water to obtain the by-product fluosilicic acid. When silicon tetrafluoride is produced by the reaction of fl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/73
CPCG01N21/73
Inventor 唐安江张丹辉韦德举黄崇张妙鹤蒋东海魏娴唐石云仇伟吴承燕
Owner GUIZHOU INST OF TECH
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