Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure manufacturing method comprises steps: a substrate is provided; a fin structure is formed on the substrate; a silicon germanium layer covering the fin structure is formed; a first dielectric layer covering the silicon germanium layer is formed; a side wall is formed, wherein the side wall covers the substrate and the first dielectric layer; an interlayer dielectric layer is formed at two sides of the fin structure on the side wall; the side wall covering the first dielectric layer is replaced by a first gate metal layer; a ferroelectric layer is formed on the first gate metal layer and the interlayer dielectric layer; and a second gate metal layer is formed on the ferroelectriclayer. The semiconductor structure acquired by the above method can improve the condition of short channel damage (SCE) generated to a short channel of the semiconductor structure due to a large dopant concentration in the short channel in the prior art, the contact resistance can be reduced, lower power supply voltage (Vdd) is thus acquired, and the performance of the semiconductor structure canbe significantly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In the Complementary Metal Oxide Semiconductor (CMOS) industry, with the arrival of 22nm and smaller dimensions, in order to improve the short channel effect and improve the performance of the device, the Fin Field-effect transistor (FinFET) is composed of The unique structure is widely adopted. [0003] FinFET is a special metal-oxide-semiconductor field-effect transistor. Its structure is usually formed on a silicon-on-insulator substrate, including narrow and independent silicon strips, as a vertical channel structure, also known as a fin, in the fin There are gate structures on both sides. Specific as figure 1 As shown, the structure of a FinFET in the prior art includes: a substrate 10 , a source 11 , a drain 12 , a fin 13 and a gate structure 14 surrounding and above the fi...

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Problems solved by technology

[0004] However, there are still some areas that need to be improved in FinFET, such as high contact resistance and short channel damage during the manufacturing process.

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