Trench type vertical double-diffused metal oxide transistor and manufacturing method thereof
An oxide transistor, vertical double diffusion technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high cost and complex process, and achieve the effect of low cost, simplified process and reduced production cost
Active Publication Date: 2021-12-07
上海领矽半导体有限公司
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Problems solved by technology
[0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, and it is necessary to improve
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[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0028] The invention optimizes the device structure and process flow of the trench type vertical double-diffused metal oxide transistor, and forms an N-type source region and a P-type body region before trench etching. After the polysilicon fills the trench, the polysilicon is not etched, but the polysilicon outside the trench is completely oxidized into silicon dioxide by oxidation, which avoids the defects caused by polysilicon etching. At the same time, this part of silicon dioxide oxidized from polysilicon can ju...
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Abstract
A method for manufacturing a trench-type vertical double-diffused metal oxide transistor includes the following steps: providing an N-type substrate, and sequentially forming an N-type epitaxial layer, a P-type body region, and an N-type source region on the N-type substrate , a first trench and a second trench; forming a gate oxide layer and polysilicon in the first and second trenches and on the N-type source region; oxidizing the polysilicon so that the first and The polysilicon outside the second trench is oxidized into silicon dioxide on the gate oxide layer; etching the silicon dioxide, the gate oxide layer, the N-type source region, and the P-type body region , thereby forming a contact hole penetrating through the silicon dioxide, the gate oxide layer and the N-type source region on both sides of the first and second trenches and extending into the P-type body region; forming a contact hole on the silicon dioxide A front metal layer, the front metal is connected to the P-type body region through the contact hole; a back metal is formed on the surface of the N-type substrate away from the N-type epitaxial layer.
Description
【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a trench-type vertical double-diffused metal oxide transistor and a manufacturing method thereof. 【Background technique】 [0002] The trench type VDMOS (vertical double diffused metal oxide transistor) is widely used in the field of switching power supply. Trench-type vertical double-diffused metal-oxide-semiconductor transistors (referred to as: trench-type VDMOS) are channeled by forming a vertical diffusion distance difference after source ion and bulk ion implantation, and are widely used in the field of switching power supply and synchronous rectification. Compared with the planar VDMOS, the internal resistance of the trench VDMOS is very small because the JFET area is eliminated. [0003] However, the existing trench-type VDMOS has problems such as relatively complicated process and high cost, which need to be improved. 【Content of invent...
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IPC IPC(8): H01L29/78H01L21/336H01L29/423H01L29/49
CPCH01L29/4236H01L29/4916H01L29/66734H01L29/7802H01L29/7813
Inventor 不公告发明人
Owner 上海领矽半导体有限公司