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Double-layer coupling type Fano resonance sensor based on graphene

A Fano resonance and graphene technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of large ohm and radiation loss, low quality factor and sensitivity, performance loss, etc., and achieve high resonance strength, simple and compact structure , Improve the effect of resonance intensity and resonance excitation frequency

Pending Publication Date: 2018-05-18
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional sensors generally use metal and semiconductor materials, which have large ohmic and radiation losses, and their performance will suffer serious loss. The quality factor and sensitivity are generally low.

Method used

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  • Double-layer coupling type Fano resonance sensor based on graphene
  • Double-layer coupling type Fano resonance sensor based on graphene
  • Double-layer coupling type Fano resonance sensor based on graphene

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Embodiment Construction

[0021] The following is a specific embodiment of the present invention and in conjunction with the accompanying drawings, further describes the technical solution of the present invention, but the present invention is not limited to this embodiment.

[0022] attached figure 1 It is a schematic diagram of a unit structure of a graphene-based double-layer coupled Fano resonance sensing device. Using silicon with a length and width of px and py and a thickness of h as the base layer, the thickness of the silicon dioxide substrate layer is d2, the thickness of the middle graphene disk is 1 nm, and the radius is R1, and then engraved on the graphene disk A circular engraved hole with an eclipse radius of R2 and an offset of L. The graphene disk structure is shown in the attached figure 2 shown. The thickness of the silicon dioxide isolation layer is d1, and the size and structure of the graphene disk on the top layer are the same as that of the graphene disk on the middle layer....

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Abstract

The invention discloses a double-layer coupling type Fano resonance sensor based on graphene and belongs to sensing devices in the technical field of infrared, and the surface plasma characteristics of the graphene are utilized; the sensing device is in a three-dimensional periodic structure and structurally comprises a silicon substrate layer, a silicon dioxide substrate layer, a graphene disk middle layer, a silicon dioxide isolation layer and a graphene disk top layer; the transmittance spectrum of the double-layer coupling type Fano resonance sensor based on the graphene in the middle-infrared band is computed and simulated with a finite element method, the sensor structure is optimized, high-performance Fano resonance can be stimulated in the middle-infrared band, the resonance curveis sensitive to the change of substance refractive indexes, and the detection functions on gas and liquid in the middle-infrared band are provided. The double-layer coupling type Fano resonance sensorbased on the graphene is simple, compact and reasonable in structure and convenient to process.

Description

technical field [0001] The invention relates to a graphene-based double-layer coupled Fano resonance sensor, which belongs to the application field of graphene materials in mid-infrared band sensor devices. Background technique [0002] The Fano resonance was discovered by Ugo Fano in 1961, and its spectrum shows a typical asymmetric linear resonance. Fano resonances, which can be readily observed in dielectric and plasmonic systems, have gained considerable attention due to their potential applications in a wide range extending the electromagnetic spectrum from the microwave to the optical range. Different from the traditional Lorentz resonance, Fano resonance exhibits dispersion and asymmetric line shape in the spectrum, which has great potential in the field of manufacturing mapping devices, such as sensors, slow light devices, plasmon switches, etc. . From a physical point of view, the asymmetric line shape of Fano resonance is caused by the destructive interference be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/552
CPCG01N21/553
Inventor 肖丙刚宫绍康
Owner CHINA JILIANG UNIV
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