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Preparation method of graphene film

A graphene film and graphene technology, applied in the field of graphene film preparation, can solve the problems of high cost, unsatisfactory reduction effect of metal hydride reducing agents, and inability to obtain high-conductivity graphene film, etc. The method is simple , suitable for industrial production

Active Publication Date: 2018-11-27
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the current low-temperature chemical reduction method, the reduction effect of hydrazine-type reducing agents and metal hydride-type reducing agents is still unsatisfactory, and hydrazine-type substances are not only high in cost, but also highly toxic substances, and a large amount of them will cause environmental damage. severe pollution
In addition, when these two types of substances are used to reduce the graphene oxide film, the film will expand or break, and a graphene film with high conductivity cannot be obtained.

Method used

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  • Preparation method of graphene film
  • Preparation method of graphene film
  • Preparation method of graphene film

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Embodiment 1

[0042] The preparation of embodiment 1 graphene oxide film

[0043] Graphite oxide was prepared from natural graphite using the "Hemmers" method. The specific method is as follows:

[0044] (1) Mix 2g of natural graphite and 1g of sodium nitrate with 50mL of sulfuric acid in a 250mL flask, and stir for 30 minutes in an ice bath.

[0045] (2) Add 6 g of potassium permanganate into the suspension, and stir at a constant temperature of 15° C. for 2 hours in an oil bath.

[0046] (3) The temperature was raised to 40° C. for 1 hour, and 100 mL of water was slowly added and stirred.

[0047] (4) The temperature was raised to 100°C, and 30 mL of peroxygenated water was added, and the temperature was kept constant for 1 hour.

[0048]The graphite flakes are exfoliated into graphene oxide sheets (steps (1)-(3)) by ultrasonic stirring in water, and a stable, colloidal, graphene oxide suspension is formed (step (4)). Then it is filtered through a filter, dried, and peeled off into a ...

Embodiment 2

[0049] The preparation of embodiment 2 graphene film

[0050] Graphene film was prepared by a capacitively coupled plasma device driven by dual frequency. The schematic diagram of its structure is shown in figure 1 shown. The capacitively coupled plasma device driven by dual frequency includes a vacuum chamber 1, an upper plate 2 located in the vacuum chamber 1, a lower plate 3 directly below the upper plate 2, a vacuum pumping system 8, and a vacuum pumping system 8 Includes vacuum valve and vacuum pump. The diameter of the upper pole plate 2 is 200mm, and the diameter of the lower pole plate 3 is 200mm. The upper pole plate 2 and the lower pole plate 3 are arranged in parallel and the distance is adjustable, preferably 50mm in this embodiment. The upper plate 2 is connected to the upper electrode 6 , and the upper electrode 6 is connected to a first matching regulator 61 . The lower plate 3 is connected to the lower electrode 7 , and the lower electrode 7 is connected to...

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Abstract

The invention relates to a preparation method of a graphene thin film. The preparation method comprises the following steps: discharging on hydrogen gas by adopting a double frequency-driven capacitive coupling plasma source for producing hydrogen plasma, reducing oxygen-containing functional groups on the surface of a graphene oxide thin film at the temperature of 20-80 DEG C by utilizing the hydrogen plasma to obtain a graphene thin film, wherein thickness of the graphene oxide thin film is 1-30 microns, flow rate of hydrogen is 10-30 sccm, RF (radio frequency) frequency of an upper electrode for producing the double frequency-driven capacitive coupling plasma source is 13.56-60MHz, power is 0-500W, the RF frequency of a lower electrode is 2-27.12MHz, power is 0-500W, hydrogen is communicated with an upper polar plate of the upper electrode by virtue of an air inlet pipe, and a plurality of small holes are uniformly distributed on the upper polar plate, so that the hydrogen producesthe hydrogen plasma by adopting a spraying type air inlet manner. The preparation method provided by the invention has the advantages that density and energy of the hydrogen plasma are reasonably controlled and self-supporting graphene with good conductivity and light transmittance performance is prepared with high efficiency and no pollution under low temperature condition.

Description

technical field [0001] The invention relates to the technical field of graphene film preparation, in particular to a preparation method of graphene film. Background technique [0002] Since its discovery by Geim et al. in 2004, graphene has attracted much attention due to its unique structure, excellent performance, high theoretical research value, and broad application prospects. As one of the important applications of graphene, graphene transparent conductive film has become a new generation of transparent conductive film due to its abundant resources, good chemical stability and flexibility, and has shown great application potential in the field of flexible displays. [0003] At present, there are three main methods for preparing graphene: [0004] (1) Mechanical peeling method. Although the preparation cost is very low, the size of the obtained graphene is very small, generally between 10-100 μm, and it is completely impossible to prepare on a large scale; [0005] (2...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
Inventor 葛水兵杨勇
Owner SUZHOU UNIV