Insulated-gate bipolar transistor, IPM module, and air conditioner

Abstract

The invention discloses an insulated-gate bipolar transistor, an IPM module, and an air conditioner. The insulated-gate bipolar transistor comprises a semiconductor substrate, wherein the crystal orientation of the semiconductor substrate is <100>; an active region which is formed on the first surface of the semiconductor substrate and comprises a trench gate region which comprises a trench openedfrom the first surface of the semiconductor substrate, wherein the trench is perpendicular to a crystal face wherein the crystal orientation <100> of the semiconductor substrate is located. The silicon atom surface density of the surface of a side wall of the trench is low, thereby enabling the migration rate of the surface of the wall of an IGBT trench. The resistivity of the insulated-gate bipolar transistor is reduced in a conduction process, the conductivity is increased, and the conductivity of a semiconductor will become higher, thereby providing low-conducting-state resistance. The migration rate of the insulated-gate bipolar transistor is increased on the basis that a drive current of the insulated-gate bipolar transistor is certain, and the reduction of the on-state saturation voltage drop of an IGBT is facilitated, thereby reducing the power consumption of the IGBT.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an insulated gate bipolar transistor, an IPM module and an air conditioner. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET device Due to the advantages of high input impedance and low turn-on voltage drop of power transistors (giant transistors, referred to as GTRs), IGBTs are currently used as a new type of power electronic device because of the advantages of small drive power and reduced saturation voltage. applied to various fields. [0003] At present, the substrate of the IGBT is generally realized by single crystal silicon, and the silicon wafer includes silicon wafer crystal planes of <100>, <110> and <111> orientations. When u...

AI Technical Summary

Problems solved by technology

However, the current direction in the channel is perpendicular to the chip surface and cannot benefit from the high mobility of the chip surface.

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