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Method of measuring concentration of fe in p-type silicon wafer

A concentration measurement, p-type silicon technology, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of high detection limit of Fe concentration, unable to reduce the detection limit of Fe concentration, etc., and achieve the effect of reducing the detection limit

Active Publication Date: 2018-06-08
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, according to the studies of the inventors of the present invention, it has been confirmed that only by changing the measurement mode from the standard mode to the limit mode, although the measurement time is naturally shortened, contrary to the description in Patent Document 1, the lower limit of detection of the Fe concentration cannot be lowered. Increase the detection limit of Fe concentration

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  • Method of measuring concentration of fe in p-type silicon wafer
  • Method of measuring concentration of fe in p-type silicon wafer
  • Method of measuring concentration of fe in p-type silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0052] (Experimental Example 1: Standard Mode)

[0053] The FAaST330 manufactured by Semilab-SDi LLC was used as the SPV device, the CF was fixed at 1584Hz, the light intensity was fixed at level 3, and NR, TC, and TB were set to various values ​​shown in Table 1, and carried out in the standard mode. SPV measurement. The irradiation wavelengths were set to 780 nm and 1004 nm.

[0054] The detection lower limit of the Fe concentration was determined by the following method. As a blank wafer, according to the description of Japanese Patent Application Laid-Open No. 2011-054784, a boron-doped p-type silicon wafer in the separation of Fe-B pairs was prepared, and after HF treatment was performed on nine points in the plane of the wafer, the SPV measurement. The minority carrier diffusion length obtained here is regarded as the minority carrier diffusion length L in the normal state FeB . Next, the silicon wafer was irradiated with a flash lamp 12 times at intervals of 5 seco...

experiment example 2

[0067] (Experimental Example 2: Extreme Mode)

[0068] FAaST330 manufactured by Semilab-SDi LLC was used as the SPV device, CF1 was set to 1584 Hz, CF2 was set to 1634 Hz, the light intensity was fixed at level 3, and NR, TC, and TB were set to various values ​​shown in Table 2. SPV measurements were performed in limit mode. The irradiation wavelengths were set at 780 nm and 1004 nm. The lower limit of detection of the Fe concentration and the treatment time were obtained in the same manner as in Experimental Example 1, and the results are shown in Table 2. The judgment results are also shown in Table 2 on the same basis. And, according to the measurement result of Table 2, the relation between the lower limit of detection of Fe concentration and processing time is also shown together in the figure 2 middle.

[0069] [Table 2]

[0070]

[0071] From Table 2 and figure 2 It can be clearly seen that in the limit mode, when NR, TC, and TB are the same as those of conve...

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Abstract

The objective of the present invention is to provide a method of measuring the concentration of Fe in a p-type silicon wafer using a surface photo-voltage (SPV) method, with which the lower detectionlimit of the Fe concentration can be lowered and measurements can be obtained in a short time. According to the present invention, measurement by SPV is performed by means of a measurement mode in which light beams having a plurality of mutually different wavelengths are radiated during the same period, under conditions in which the time between readings is at least equal to 35 ms and at most equal to 120 ms and the time constant is at least equal to 20 ms, or the time between readings is at least equal to 10 ms and less than 35 ms and the time constant is at least equal to 100 ms, and the number of readings is at most equal to 12.

Description

technical field [0001] The invention relates to a method for measuring Fe concentration in a p-type silicon wafer based on the SPV method (Surface Photo-Voltage: surface photovoltaic method). Background technique [0002] If a p-type silicon wafer is contaminated with Fe, it will adversely affect the characteristics of devices produced from the wafer. Therefore, a method for easily evaluating the Fe concentration in a p-type silicon wafer has been developed. As one of the methods, there is known a method of electrically measuring the diffusion length of minority carriers by the SPV method and obtaining the Fe concentration in the p-type silicon wafer from the measurement result. [0003] In the SPV method, a p-type silicon wafer is irradiated with light of a specific wavelength, and the surface electromotive force (SPV signal) of the wafer at this time is measured to obtain the diffusion length of minority carriers in the wafer. Hereinafter, this is also simply referred to...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/14H01L22/24G01R31/2656G01R31/2648
Inventor 福岛伸弥水田匡彦
Owner SUMCO CORP