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Preparation method of spectrum selective ITO thin film for automotive glass

An automotive glass, selective technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problem of low reflectivity in the infrared region, achieve good visibility, increase transmittance, and increase reflectivity Effect

Active Publication Date: 2018-06-19
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to overcome the defect of low reflectivity in the infrared region of the prior art, and provide a method for preparing a spectrally selective ITO film for automotive glass

Method used

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  • Preparation method of spectrum selective ITO thin film for automotive glass
  • Preparation method of spectrum selective ITO thin film for automotive glass

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Experimental program
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Effect test

Embodiment 1

[0028] A preparation method for a spectrally selective ITO film for automotive glass, comprising the following steps:

[0029] (1) Clean the PET substrate, clean the surface and back of the PET substrate, and remove dust particles, organic and inorganic impurities;

[0030] a) strong ultrasonic cleaning in acetone solution for 3-5 minutes, and rinse with deionized water;

[0031] b) Strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Blow dry the surface and back;

[0032] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0033] (2) Preparation before preparation of spectrally selective ITO thin film:

[0034] a) Install the ITO sputtering target, the purity of the ITO target is more than 99.999% atomic percent, the diameter of the ITO target is 50.8mm, and the background vacuum is 1×10 -4 Pa;

[0035] b) Set the sputtering power to 30W;

[0036] c) Using high-purity Ar gas as the sputtering gas (vo...

Embodiment 2

[0041] The preparation method of the ITO thin film among the present embodiment and embodiment 1 is basically the same, and the difference is: in (3) b), the sputtering time is 1040s, and the ITO thin film thickness that finally obtains is 20nm namely conductive thin film PET / ITO ( 20nm).

Embodiment 3

[0043] The preparation method of the ITO thin film among the present embodiment and embodiment 1 is basically the same, and difference is: sputtering power is 25W, and the gas flow rate of Ar gas is 25sccm, and sputtering air pressure is 0.35Pa; In (3) b), The sputtering time is 780s, and the thickness of the finally obtained ITO film is 12nm, that is, the conductive film PET / ITO (12nm).

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Abstract

The invention belongs to the technical field of conductive thin films and particularly relates to a preparation method of a spectrum selective ITO thin film for automotive glass. The preparation method of the ITO thin film comprises the following steps of cleaning a PET substrate; making preparation before preparing the spectrum selective ITO thin film; and preparing the spectrum selective ITO thin film through a room temperature magnetron sputtering method. The spectrum selective ITO thin film prepared through the method can reduce the reflectivity and improve the transmissivity at the visible light long waveband and is good in visibility. At infrared light waveband, the spectrum selective ITO thin film improves the reflectivity and blocks heat transfer.

Description

technical field [0001] The invention belongs to the technical field of conductive thin films, in particular to a method for preparing a spectrally selective ITO thin film used for automobile glass. Background technique [0002] Indium tin oxide (ITO) thin film is a heavily doped, highly degenerate n-type semiconductor material, which has a complex body-centered cubic ferromanganese structure (that is, cubic In 2 o 3 structure), the 32 oxygen ions in each customary cell are completely arranged in a cubic close-packed manner according to the spinel structure, forming a face-centered cubic lattice of oxygen ions. In the face-centered cubic lattice of oxygen ions, there are oxygen tetrahedral interstitial sites (called A sites) and oxygen octahedral interstitial sites (called B sites). The molecular formula of spinel is AB 2 o 4 , the customary cell general formula is A 8 B 16 o 32 , that is, the number of cations: the number of oxygen ions is 24:32, and the molecular for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/086C23C14/35
Inventor 胡益丰尤海鹏张锐郭璇朱小芹邹华
Owner JIANGSU UNIV OF TECH
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