A method for increasing the doping concentration of n-type gasb-based semiconductor laser materials

Abstract

The invention discloses a method for increasing the carrier doping concentration of n-type GaSb-based semiconductor laser materials. In the method, a high-temperature cracking device is installed on the doping source furnace to realize the cracking of the polymer doping source into single-atom molecules, so that the doping source is doped into the material in the form of single-atom molecules. The high-temperature cracking device involved is equipped with There is a needle valve, and the needle valve can control the multimer dopant source of suitable strength to enter the pyrolysis device, so that the dopant source in the form of a multimer can be fully cracked into a monoatomic molecular form in the cracker. The method disclosed in the present invention utilizes a specially designed doping source pyrolysis device to obtain Te molecular beams of monoatomic molecules, and solves the problem of low doping concentration and poor quality of material epitaxy caused by doping traditional Te sources in the form of polymers The problem, in the form of Te single-atom molecules, the doping concentration can reach 1×10 19 cm ‑3 And above, meeting the manufacturing requirements of GaSb-based semiconductor laser devices in the 2μm band.

Description

Technical field [0001] The present invention relates to the field of semiconductor laser materials, in particular to a method for improving the carrier doping concentration of n-type GaSb-based semiconductor laser doped materials and the crystal quality of epitaxial materials by splitting polymer doping elements to form monoatomic molecular doping Method and device for epitaxial growth. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, long life, low cost, and easy mass production. They are widely used in the field of optoelectronics and have become the core device in the field of optoelectronics science today. Semiconductor lasers have been widely used in laser ranging, laser radar, laser communications, laser simulation weapons, laser warning, laser guided tracking, ignition and detonation, automatic control, detection instruments, etc., forming a broad market. In GaSb-based semiconductor laser materials, the ternary and quater...

AI Technical Summary

Problems solved by technology

However, my country does not have a high-performance GaSb-based semiconductor laser with an output wavelength of 2 μm, and the output power of semiconductor lasers in this band is relatively low in the world, only about 300mW

[0003] The main reason why GaSb-based semiconductor laser devices in the 2μm band cannot achieve high-performance and high-power laser output is that the carrier doping concentration of the n-type doped layer material in the laser structure cannot be effectively controlled when the GaSb-based semiconductor laser structure is grown epitaxially. , and at the same time, a high carrier doping concentration cannot be obtained, and a carrier doping concentration of 1×10 19 cm -3 and above very difficult

At present, although high-concentration doping of GaSb-based materials has been achieved in foreign literature reports, most of the doping sources exist in the form of polymers, resulting in low effective mobility of carriers, which further affects GaSb-based semiconductor laser devices. The output power of the laser is only on the order of 100 milliwatts, which seriously limits the practical application of GaSb-based semiconductor lasers in this band. Therefore, the output power of GaSb-based semiconductor laser devices in the 2μm band needs to be improved urgently.

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