High-luminance LED chip and manufacturing method thereof

Abstract

The invention discloses a high-luminance LED chip and a manufacturing method thereof. The high-luminance LED chip comprises an epitaxial wafer, a current barrier layer, a current expanding layer, reflecting layers, a P electrode, an N electrode and a transparent insulation layer, wherein the epitaxial wafer comprises a substrate material, a buffer layer, an N-type semiconductor layer, a luminancelayer and a P-type semiconductor layer, the N-type semiconductor layer, the luminance layer and the P-type semiconductor layer are formed on the substrate material in sequence, the current barrier layer is formed on the P-type semiconductor layer, the current expanding layer is formed on the P-type semiconductor layer, the reflecting layers are formed in the current barrier layer and a lower stepface and comprise multiple reflecting layer subsections which are arranged at equal intervals, the P electrode is formed on the reflecting layer on the current barrier layer, and the N electrode is formed on the reflecting layer on the lower step face. By means of the high-luminance LED chip and the manufacturing method thereof, the reflecting layers are arranged below the electrodes, the absorption of light by the electrodes can be further reduced, the reflecting efficiency to light by the electrodes is improved, and the luminance of the LED chip is further improved; meanwhile, the arrangement of the reflecting layers is beneficial to improving of the current distribution efficiency, and thus the luminous efficiency and reliability of the LED chip are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor chips, in particular to a high-brightness LED chip and a manufacturing method thereof. Background technique [0002] At present, the third-generation semiconductor materials have been widely used in various fields of human production and life, and play an important role in them. Gallium nitride (GaN) material, as an important part of the third-generation semiconductor material family, has also been widely used, and it plays an irreplaceable role in the LED semiconductor industry. GaN material is a hexagonal wurtzite structure, which has the advantages of stable chemical properties, high temperature resistance, large band gap, and high electron drift saturation velocity. Therefore, GaN-based materials are widely used in the preparation of electronic devices such as LED chips, blue LEDs, green LEDs, and ultraviolet LEDs, and are widely used in various fields of production and life such as lig...

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Problems solved by technology

However, the above-mentioned LED chips still cannot fully meet people's living needs.

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