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Bismuth quantum dot and preparation method thereof

A technology of quantum dots and bismuth powder, which is applied in the field of bismuth quantum dots and its preparation, can solve the problems of low yield of flake bismuthene materials, is not suitable for commercial production, and is not easy to repeat, and achieves uniform size, low toxicity, and large size. small effect

Active Publication Date: 2018-07-06
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the yield of the sheet-like bismuthene material prepared by the mechanical exfoliation method is low, which is not suitable for commercial production, and the operation is cumbersome and time-consuming; while the amount of bismuthene prepared by the chemical vapor deposition method is small, and it is not easy to repeat

Method used

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  • Bismuth quantum dot and preparation method thereof
  • Bismuth quantum dot and preparation method thereof
  • Bismuth quantum dot and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0051] A preparation method of bismuth quantum dots, comprising the following steps:

[0052] (1) Take a Shu Niu glass bottle with a capacity of 250mL, fill it with 120mL of NMP solvent, and then add 120mg of 200 mesh (200 grains / square inch, that is, a particle size of 0.074mm) bismuth powder to obtain the initial concentration of bismuth powder 1mg / mL (or 1000ppm) dispersion;

[0053] (2) Put the glass bottle in (1) into the Xinzhi ultrasonic constant temperature cleaning machine SBL-22DT, and perform water bath ultrasonication at 70% of the maximum power (600W) (that is, with a power of 420W) at a constant temperature of 10°C for 6 hours;

[0054] After ultrasonication in a water bath, place the resulting solution in a BILON-1800Y cell disruptor (maximum power of 1800W), and perform probe ultrasonication at 4°C with a power of 60% (that is, a power of 1080W) for 24 hours to obtain the first ultrasonic wave. liquid;

[0055] Then put the first ultrasonic liquid into the Xi...

Embodiment 2

[0059] A preparation method of bismuth quantum dots, comprising the following steps:

[0060] (1) Take a Shu Niu glass bottle with a capacity of 250 mL, fill it with 120 mL of NMP solvent, and then add 120 mg of 200 mesh bismuth powder to obtain a dispersion with an initial concentration of bismuth powder of 1 mg / mL (or 1000 ppm);

[0061] (2) Put the glass bottle in (1) into Xinzhi Ultrasonic Constant Temperature Cleaner SBL-22DT, and perform water bath ultrasonication for 3 hours at a constant temperature of 10°C with 70% of the maximum power (600W) (that is, with a power of 420W);

[0062] After ultrasonication in a water bath, place the resulting solution in a BILON-1800Y cell disruptor (maximum power of 1800W), and perform probe ultrasonication at 4°C with a power of 60% (that is, a power of 1080W) for 24 hours to obtain the first ultrasonic wave. liquid;

[0063] Then put the first ultrasonic liquid into the Xinzhi ultrasonic constant temperature cleaning machine SBL-22...

Embodiment 3

[0069] A preparation method of bismuth quantum dots, comprising the following steps:

[0070] (1) Take a Shu Niu glass bottle with a capacity of 500mL, fill it with 400mL of NMP solvent, and then add 200mg of 300 mesh bismuth powder to obtain a dispersion with an initial concentration of bismuth powder of 0.5mg / mL;

[0071] (2) Put the glass bottle in (1) into Xinzhi ultrasonic constant temperature cleaning machine SBL-22DT, and perform water bath ultrasonication at a constant temperature of 4°C with a power of 480W for 2 hours;

[0072] After ultrasonication in the water bath, place the obtained solution in a BILON-1800Y cell disruptor (maximum power of 1800W), and perform probe ultrasonication with 75% power (ie, power of 1350W) for 15 hours to obtain the first ultrasonic solution;

[0073] Then put the first ultrasonic liquid into the Xinzhi ultrasonic constant temperature cleaning machine SBL-22DT, and perform the second ultrasonic bath in a water bath with a power of 450W...

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Abstract

The invention provides a preparation method of a bismuth quantum dot. The preparation method comprises the steps that firstly, bismuth powder is scattered in an organic solvent, and dispersion liquidis obtained; secondly, primary water bath ultrasonic treatment is firstly carried out on the dispersion liquid, probe type ultrasonic treatment is carried out, first ultrasonic liquid is obtained, secondary water bath ultrasonic treatment is carried out on the first ultrasonic liquid, and secondary ultrasonic liquid is obtained; and thirdly, low-speed centrifugation is carried out on the secondaryultrasonic liquid at the speed of 2000 rpm-7000 rpm, first liquid supernatant is collected, high-speed centrifugation is carried out on the first liquid supernatant at the speed of 9000 rpm-12000 rpm, secondary liquid supernatant is collected, and the bismuth quantum dot is obtained. According to the method, the process is simple, operation is easy, reproducibility is good, and the size controllable bismuth quantum dot with good monodispersity is easily prepared. The invention further provides the prepared bismuth quantum dot.

Description

technical field [0001] The invention relates to the field of two-dimensional materials, in particular to a bismuth quantum dot and a preparation method thereof. Background technique [0002] Two-dimensional materials refer to materials in which electrons can only move freely (planar motion) on the non-nano scale (1-100nm) in two dimensions, such as nano-films. Two scientists from the University of Manchester, Andre Geim and Kostya Novoselov, first made graphene in 2004 by the adhesive tape method. Since then, black phosphorus (phosphorene), silicene, germanene, antimonene, boron nitride, molybdenum disulfide, and a series of quasi-two-dimensional materials with only a single atomic layer thickness have been discovered one after another. [0003] Bismuthene is a two-dimensional material exfoliated from bulk metal bismuth, which has a graphene-like structure. However, bismuthene is a direct bandgap semiconductor with an energy gap of 0.306eV (the bottom of the conduction ban...

Claims

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Application Information

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IPC IPC(8): B22F9/04B22F1/00C09K11/74B82Y30/00B82Y40/00B22F1/054
CPCC09K11/74B82Y30/00B82Y40/00B22F9/04B22F2009/049B22F1/054
Inventor 张晗黄浩
Owner SHENZHEN UNIV
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