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Semiconductor device

A semiconductor and component technology, applied in the field of semiconductor components, can solve the problem of sacrificing on-state resistance, etc., achieve high breakdown voltage, low on-state resistance, and improve the effect of breakdown voltage

Active Publication Date: 2018-07-06
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, designers often sacrifice on-state resistance to meet high breakdown voltage specifications, and vice versa

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment Construction

[0033] The present invention will be described more fully with reference to the drawings of the present embodiment. However, the present invention can also be embodied in various forms and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the drawings may be exaggerated for clarity. The same or similar symbols represent the same or similar elements, and the following paragraphs will not repeat them one by one.

[0034] In the following embodiments, the first conductivity type is different from the second conductivity type. In one embodiment, the first conductivity type is N type, and the second conductivity type is P type. In another embodiment, the first conductivity type is P-type, and the second conductivity type is N-type. The P-type dopant is, for example, boron; the N-type dopant, for example, is phosphorus or arsenic. In this embodiment, the first conductivity type is P-type and the second conductivity type is N-type...

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Abstract

The invention provides a semiconductor device including a substrate, a metal-oxide-semiconductor field-effect transistor (MOSFET), and a plurality of junction gate field-effect transistors (JFETs) connected in parallel is provided. The MOSFET is disposed on a substrate. The MOSFET includes a source region, a drain region, and a gate structure disposed between the source region and the drain region. The JFETs and the MOSFET are connected in series. Each of the JFETs laterally extends between the source region and the drain region.

Description

technical field [0001] The present invention relates to an integrated circuit, and more particularly to a semiconductor device. Background technique [0002] In recent years, with the rising awareness of environmental protection, high voltage devices with low power consumption and high-efficiency energy conversion have attracted more and more attention. Generally speaking, high-voltage components are mainly used in power switch components, such as switching mode power supply (SMPS), lighting, motor control, or plasma display drivers. [0003] A laterally diffused metal oxide semiconductor (LDMOS) device is a typical high-voltage device that can be integrated with a complementary metal oxide semiconductor manufacturing process to manufacture control, logic, and power switches on a single chip. functional components. The LDMOS device must have a high breakdown voltage (breakdown voltage) and a low on-state resistance (Ron) during operation. However, designers often sacrific...

Claims

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Application Information

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IPC IPC(8): H01L27/105
CPCH01L27/105H01L29/42368H01L29/0873H01L29/0634H01L29/0653H01L29/7816H01L29/1095
Inventor 温文莹
Owner NUVOTON
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