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Quantum dot ink and preparation method thereof

A quantum dot and ink technology, applied in the field of quantum dot ink and its preparation, can solve the problems of device performance degradation, processing performance and film-forming performance not meeting the requirements, and achieve good film-forming performance and processability, and excellent devices performance effect

Active Publication Date: 2018-07-13
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0021] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot ink and a preparation method thereof, aiming to solve the problem that the processability and film-forming performance of the existing solvent system for semiconductor devices cannot meet the requirements, and the existing The problem of device performance degradation after quantum dot film formation for semiconductor devices

Method used

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  • Quantum dot ink and preparation method thereof
  • Quantum dot ink and preparation method thereof
  • Quantum dot ink and preparation method thereof

Examples

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Effect test

Embodiment 1

[0135] Embodiment 1: The formula and preparation process of quantum dot ink are as follows:

[0136] The solvent consisted of one solvent, decahydronaphthalene.

[0137] Add the following components to a 500mL single-necked flask with uniform stirring, and the addition order is: 100mg of quantum dots (the surface ligand is oleic acid), 10mL of decahydronaphthalene, and stir the mixture for 30 minutes to obtain quantum dot ink.

Embodiment 2

[0138] Embodiment 2: the formula and preparation process of quantum dot ink are as follows:

[0139] The mixed solvent is composed of two solvents, dodecane and 2-methylcyclohexanol, wherein the volume ratio of dodecane and 2-methylcyclohexanol is 1:1.

[0140] Add the following components to a 500mL single-necked flask with uniform stirring, and the addition order is: 100mg of quantum dots (the surface ligand is octyl thiol), 2.5 mL of dodecane solvent, 2.5 mL of 2-methyl Cyclohexanol solvent, the mixture was stirred for 30 minutes to obtain the quantum dot ink.

Embodiment 3

[0141] Embodiment 3: the formula and preparation process of quantum dot ink are as follows:

[0142] The mixed solvent is composed of three solvents: o-dichlorobenzene, phenylcyclohexane and 2-methylcyclohexanol, wherein the volume ratio of o-dichlorobenzene, phenylcyclohexane and 2-methylcyclohexanol is 1 :4:5.

[0143] Add the following components to a 500mL single-necked flask with uniform stirring, and the addition order is: 100mg of quantum dots (the surface ligand is oleic acid), 0.3 mL of o-dichlorobenzene solvent, 1.2 mL of phenylcyclohexane alkane solvent and 1.5 mL of 2-methylcyclohexanol solvent, and the mixture was stirred for 30 minutes to obtain a quantum dot ink.

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Abstract

The invention discloses a quantum dot ink and a preparation method thereof, wherein the quantum dot ink comprises, by weight, 0.01-40.0% of quantum dots, and 60.0-99.99% of a solvent, wherein the quantum dots comprise at least a quantum dot structure unit sequentially arranged in a gradual direction, the quantum dot structure unit is a gradually-changed alloy component structure with energy levelwidth change in a radial direction or a uniform component structure with consistent energy level width in a radial direction, and the solvent contains at least an organic solvent. According to the present invention, by selecting the solvent system, the good film forming property and the good processability of the quantum dot ink, especially the printability, can be achieved; and by selecting the quantum dots, the semiconductor device formed after the film forming has excellent device performance.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot ink and a preparation method thereof. Background technique [0002] Quantum dots are a special material that is confined to the order of nanometers in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuously adjustable emission wavelength, narrow emission wavelength, Broad absorption spectrum, high luminous intensity, long fluorescence lifetime and good biocompatibility, etc. These characteristics make quantum dots have broad application prospects in flat panel display, solid state lighting, photovoltaic solar energy, biomarkers and other fields. Especially in the application of flat panel display, quantum dot-based quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLED) have been improved in display quality, device performance, and manufacturing cost by virtue of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/033C09D11/03C09D11/36C09D11/38C09D11/50C09D11/00
CPCC09D11/00C09D11/03C09D11/033C09D11/36C09D11/38C09D11/50
Inventor 杨一行刘政钱磊
Owner TCL CORPORATION
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